2009
DOI: 10.1016/j.jallcom.2009.06.086
|View full text |Cite
|
Sign up to set email alerts
|

Anomalous positive magnetoresistance effect in La0.67Ca0.33MnO3 microbridges

et al.
Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
5
1
1

Year Published

2014
2014
2020
2020

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 6 publications
(7 citation statements)
references
References 28 publications
0
5
1
1
Order By: Relevance
“…Electron beam lithography (EBL) is a nanofabrication technique in rapid development [32]. Guo et al [32] grew La 0.67 Ca 0.33 MnO 3 films with thickness of ~100 nm on SrTiO 3 (100) substrates by a PLD technique and fabricated La 0.67 Ca 0.33 MnO 3 microbridges with different widths (e.g., 1.5 μm, 1 μm, and 500 nm) by EBL technology.…”
Section: Synthesis Techniques For One-dimensional Perovskite Manganitmentioning
confidence: 99%
See 3 more Smart Citations
“…Electron beam lithography (EBL) is a nanofabrication technique in rapid development [32]. Guo et al [32] grew La 0.67 Ca 0.33 MnO 3 films with thickness of ~100 nm on SrTiO 3 (100) substrates by a PLD technique and fabricated La 0.67 Ca 0.33 MnO 3 microbridges with different widths (e.g., 1.5 μm, 1 μm, and 500 nm) by EBL technology.…”
Section: Synthesis Techniques For One-dimensional Perovskite Manganitmentioning
confidence: 99%
“…Guo et al [32] grew La 0.67 Ca 0.33 MnO 3 films with thickness of ~100 nm on SrTiO 3 (100) substrates by a PLD technique and fabricated La 0.67 Ca 0.33 MnO 3 microbridges with different widths (e.g., 1.5 μm, 1 μm, and 500 nm) by EBL technology. Beekman et al [33] also grew thinner La 0.7 Ca 0.3 MnO 3 films (with a thickness range of 20–70 nm) on SrTiO 3 (001) substrates by DC sputtering.…”
Section: Synthesis Techniques For One-dimensional Perovskite Manganitmentioning
confidence: 99%
See 2 more Smart Citations
“…Jiang 等 [29] 研究了不同厚度 La 0.325 Pr 0.3 Ca 0.375 MnO 3 薄膜的磁性与电阻各向异性, 结果表明, 对于 30 nm 厚 的薄膜, 其各向异性电阻率(anisotropic resistivity, AR) 非常大(~10 5 %); 对于120 nm 厚的薄膜, 由于应变弛豫, 它的 AR 最大值显著降低(~2×10 3 %)。Nori 等 [30] 利用脉 冲激光沉积法在 Si(100)上制备了晶粒尺寸为 20~60 nm 的 La 0.7 Sr 0.3 MnO 3 薄膜, 并对其磁性能进行了表征。结 果表明, 晶粒致密排列的 La 0.7 Sr 0.3 MnO 3 薄膜居里温度 为 349 K, 而柱状晶粒组成的薄膜居里温度为 355 K, 这是目前已报道的沉积在 Si 衬底上 LSMO 薄膜最高的 居里温度。 最近, 人们对纳米结构的钙钛矿锰氧化物薄膜 的电磁输运特性亦进行了研究, 如 Hirooka 等 [31] 利 用原子力显微镜(AFM)辅助化学湿法刻蚀技术制备 了(La,Ba)MnO 3 纳米桥结构, 发现纳米桥的磁电阻 呈现 2 个数量级的变化。 近年来, Guo 等 [32] 采用 EBL 技术制备了不同宽度的 (La,Ca)MnO 3 薄膜微桥结 构, 电输运特性测量结果表明: 薄膜微桥宽度在 0.50 µm 以下, M-I 相变消失, 并且出现反常的正磁 电阻现象。…”
Section: 钙钛矿锰氧化物薄膜材料unclassified