Abstract:MoS2 films grown on glass by pulsed laser deposition technique evolve from bilayer to bulk-like structure with time following intrinsic anomalous scaling behaviour caused by shadowing effect during deposition.
“…The surface morphology of BNT thin films was investigated by AFM which gives an insight of surface microstructure, scaling behavior, and growth dynamics of the films. The equation [31,38].…”
Section: Scaling Behavior and Growth Mechanismmentioning
confidence: 99%
“…The In order to understand the dynamic scaling behavior and growth mechanism of films, the height-height correlation function (HHCF) is fitted with a suitable theoretical model to estimate the growth parameters: local roughness (αloc), RMS roughness (interface width) () and lateral correlation length () are calculated from AFM images using HHCF), H(r, t), which can describe the type of scaling and growth mechanism. It is a statistical average of the mean square of height difference between pair points (x, y) and (x′, y′), separated by a distance r is given by following equation [31,38].…”
Section: Scaling Behavior and Growth Mechanismmentioning
Herein, we have investigated the optical and microwave dielectric properties of Bi 0.5 Na 0.5 TiO 3 (BNT) thin films grown under different oxygen pressure ( P O2 ) using pulsed laser deposition (PLD) technique. The X-ray diffraction measurements confirms the single phase of BNT along with secondary phase and further reduction in secondary phase and increase in BNT phase with P O2 , signifies the close relation between the crystal structure and oxygen content. The shift of Raman-active TO1, TO2 and TO3 modes towards higher wavelengths and increase in mode intensity with P O2 indicating the films degree of crystallinity. The local roughness ( α loc ) of all films obtained as ~ 0.85, and the interface width ( w ) and lateral correlation length ( ξ ) of films varies with P O2 . Also, the films exhibit the increase in refractive index and reduction in optical bandgap of due to improvement in crystallinity and reduction in the oxygen vacancies. The microwave dielectric properties show a strong P O2 depends with higher dielectric constant ( ε r = 336) with lower loss (tan δ = 0.0093) at 5 GHz which show the potential applications in high frequency devices.
“…The surface morphology of BNT thin films was investigated by AFM which gives an insight of surface microstructure, scaling behavior, and growth dynamics of the films. The equation [31,38].…”
Section: Scaling Behavior and Growth Mechanismmentioning
confidence: 99%
“…The In order to understand the dynamic scaling behavior and growth mechanism of films, the height-height correlation function (HHCF) is fitted with a suitable theoretical model to estimate the growth parameters: local roughness (αloc), RMS roughness (interface width) () and lateral correlation length () are calculated from AFM images using HHCF), H(r, t), which can describe the type of scaling and growth mechanism. It is a statistical average of the mean square of height difference between pair points (x, y) and (x′, y′), separated by a distance r is given by following equation [31,38].…”
Section: Scaling Behavior and Growth Mechanismmentioning
Herein, we have investigated the optical and microwave dielectric properties of Bi 0.5 Na 0.5 TiO 3 (BNT) thin films grown under different oxygen pressure ( P O2 ) using pulsed laser deposition (PLD) technique. The X-ray diffraction measurements confirms the single phase of BNT along with secondary phase and further reduction in secondary phase and increase in BNT phase with P O2 , signifies the close relation between the crystal structure and oxygen content. The shift of Raman-active TO1, TO2 and TO3 modes towards higher wavelengths and increase in mode intensity with P O2 indicating the films degree of crystallinity. The local roughness ( α loc ) of all films obtained as ~ 0.85, and the interface width ( w ) and lateral correlation length ( ξ ) of films varies with P O2 . Also, the films exhibit the increase in refractive index and reduction in optical bandgap of due to improvement in crystallinity and reduction in the oxygen vacancies. The microwave dielectric properties show a strong P O2 depends with higher dielectric constant ( ε r = 336) with lower loss (tan δ = 0.0093) at 5 GHz which show the potential applications in high frequency devices.
“…In order to understand the dynamic scaling behavior and growth mechanism of films, the height-height correlation function (HHCF) is fitted with a suitable theoretical model to estimate the growth parameters: local roughness (αloc), RMS roughness (interface width) () and lateral correlation length () are calculated from AFM images using HHCF), H(r, t), which can describe the type of scaling and growth mechanism. It is a statistical average of the mean square of height difference between pair points (x, y) and (x′, y′), separated by a distance r is given by following equation [31,38].…”
Section: Scaling Behavior and Growth Mechanismmentioning
confidence: 99%
“…The scaling theory is used to understand the growth dynamics to evaluate the statistical properties from surface morphology of films. In the past years, many theoretical models were established to study the growth mechanism of films to a set of scaling exponents [29][30][31]. However, there are no reports available on the growth mechanism of PLD deposited BNT films using scaling theory and is motivated to pursue this study.…”
Herein, we have investigated the optical and microwave dielectric properties of Bi0.5Na0.5TiO3 (BNT) thin films grown under different oxygen pressure (PO2) using pulsed laser deposition (PLD) technique. The X-ray diffraction measurements confirms the single phase of BNT along with secondary phase and further reduction in secondary phase and increase in BNT phase with PO2, signifies the close relation between the crystal structure and oxygen content.The shift of Raman-active TO1, TO2 and TO3 modes towards higher wavelengths and increase in mode intensity with PO2 indicating the films degree of crystallinity. The local roughness (αloc) of all films obtained as 0.85, and the interface width () and lateral correlation length (ξ) of films varies with PO2. Also, the films exhibit the increase in refractive index and reduction in optical bandgap of due to improvement in crystallinity and reduction in the oxygen vacancies. The microwave dielectric properties show a strong PO2 depends with higher dielectric constant (εr = 336) with lower loss (tanδ = 0.0093) at 5 GHz which show the potential applications in high frequency devices.
“…This approach helps to infer the main physical pro-cesses that control the growth and was already applied to deposits of various materials [15][16][17]. Several works have also investigated the scaling of surface fluctuations and correlations in the initial stages of heteroepitaxial film deposition [18][19][20][21][22][23][24][25][26][27][28][29][30][31]. Their results cannot be interpreted in the light of kinetic roughening theories because the deposits are mostly formed by isolated islands, so that height fluctuations and correlations are related to island widths, heights, and surface density.…”
Using kinetic Monte Carlo simulations, we develop a framework to relate morphological properties and microscopic dynamics during island growth, coalescence, and initial formation of continuous heteroepitaxial films. The average island width is controlled by adatom mobility on the substrate. Subsequent evolution strongly depends on the Ehrlich-Schwöebel energy barrier E ES of the deposited material. As E ES decreases, islands becomes taller and their coalescence is delayed. For small islands and large E ES , the global roughness increases as W ∼ thickness 1/2 and the local roughness increases
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