Anomalous Hall resistivity of cobalt films: Evidence for the intrinsic spin-orbit effect

Kötzler, J.; Gil, W.

doi:10.1103/physrevb.72.060412

Cited by 85 publications

(69 citation statements)

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“…[10][11][12][13] Interest has also been increased by the ͑phenomenological͒ demonstration that a relatively simple intrinsic contribution that is a momentum-space Berry phase band-structure property dominates the AHE in many ferromagnets. [14][15][16][17][18][19][20][21][22] From one point of view, the main reason for the physical opaqueness of formal microscopic approaches to the AHE is that the Hall current is much weaker than the current parallel to the electric field. No Hall contribution appears in usual theories of the dc conductivity which use Gaussian disorder potential distribution models and evaluate conductivity to the leading order of the small parameter =1/͑k F l sc ͒, where l sc is the disorder scattering length.…”

Section: Introductionmentioning

confidence: 99%

Anomalous Hall effect in a two-dimensional Dirac band: The link between the Kubo-Streda formula and the semiclassical Boltzmann equation approach

et al. 2007

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The anomalous Hall effect ͑AHE͒ is a consequence of spin-orbit coupling in a ferromagnetic metal and related primarily to density-matrix response to an electric field that is off-diagonal in band index. For this reason disorder contributions to the AHE are difficult to treat systematically using a semiclassical Boltzmann equation approach, even when weak localization corrections are disregarded. In this article we explicitly demonstrate the equivalence of an appropriately modified semiclassical transport theory which includes anomalous velocity and side-jump contributions and microscopic Kubo-Streda perturbation theory, with particular unconventional contributions in the semiclassical theory identified with particular Feynman diagrams when calculations are carried out in a band-eigenstate representation. The equivalence we establish is verified by explicit calculations for the case of the two-dimensional Dirac model Hamiltonian relevant to graphene.

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Section: Introductionmentioning

confidence: 99%

Anomalous Hall effect in a two-dimensional Dirac band: The link between the Kubo-Streda formula and the semiclassical Boltzmann equation approach

et al. 2007

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“…The resistive switching in ferroelectric tunnel junctions can be explained by assuming a simple electrostatic model of a ferroelectric tunnel barrier that considers the effective screening lengths, 15,21 which is larger for LSMO than for the Co electrode. 27,28 The resistance area product (RA) of the junctions is about 6 MXlm 2 in the ON-state (measured at 100 mV), which is in the typical range for tunnel junctions. 29 More insight into the transport mechanism can be gained from the tunnel conductance G ¼ dI/dV calculated from the IV-characteristics.…”

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confidence: 99%

Tunnel electroresistance in junctions with ultrathin ferroelectric Pb(Zr0.2Ti0.8)O3 barriers

Pantel

Goetze

et al. 2012

Applied Physics Letters

103

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In ferroelectric tunnel junctions, the ferroelectric polarization state of the barrier influences the quantum-mechanical tunneling through the junction, resulting in tunnel electroresistance (TER). Here, we investigate tunnel electroresistance in Co/PbZr0.2Ti0.8O3/La0.7Sr0.3MnO3 tunnel junctions. The ferroelectric polarization in tunnel junctions with 1.2-1.6 nm (three to four unit cells) PbZr0.2Ti0.8O3 thickness and an area of 0.04 μm2 can be switched by about 1 V yielding a resistive ON/OFF-ratio of about 300 at 0.4 V. Combined piezoresponse force microscopy and electronic transport investigations of these junctions reveal that the transport mechanism is quantum tunneling and the resistive switching in these junctions is due only to ferroelectric switching.

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“…Fe) [15][16][17][18], (b) aρ xx + bρ 2 xx (e.g. Co) [19,20], (c) bρ α xx (e.g. Ni) with 1 < α < 2 [21], and (d) aρ xx (e.g.…”

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Proper Scaling of the Anomalous Hall Effect

2009

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Working with epitaxial films of Fe, we succeeded in independent control of different scattering processes in the anomalous Hall effect. The result appropriately accounted for the role of phonons, thereby clearly exposing the fundamental flaws of the standard plot of the anomalous Hall resistivity versus longitudinal resistivity. A new scaling has been thus established that allows an unambiguous identification of the intrinsic Berry curvature mechanism as well as the extrinsic skew scattering and side-jump mechanisms of the anomalous Hall effect.PACS numbers: 75.47.Np;72.15.Eb;73.50.Jt Shortly after the discovery of the Hall effect, in 1880 Edwin Hall further observed in ferromagnetic metals an additional large contribution besides the ordinary one, which is now called the anomalous Hall effect (AHE) -one of the most prominent phenomena existing in magnetic materials [1]. While the ordinary Hall effect has been well understood as a result of the Lorentz force deflecting the charge carriers, the mechanism of the AHE has remained controversial despite the long history of research, because its rich phenomenology defies the standard classification methodology, prompting conflicting reports claiming the dominance of various processes [2][3][4][5][6][7][8][9][10][11][12]. Recently it again attracts great attention because of its natural connection to the spin Hall effect and quantum spin Hall effect [13,14].In ferromagnets, the transverse resistivity has two contributions: one is ordinary and is proportional to the applied magnetic field; the other is anomalous and is normally proportional to the magnetization [8,9]. It is often written aswhere r 0 and r a are coefficients that characterize the strength of the ordinary and anomalous Hall resistivity ρ h and ρ ah , respectively.

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Anomalous Hall resistivity of cobalt films: Evidence for the intrinsic spin-orbit effect

Cited by 85 publications

References 20 publications

Anomalous Hall effect in a two-dimensional Dirac band: The link between the Kubo-Streda formula and the semiclassical Boltzmann equation approach

Anomalous Hall effect in a two-dimensional Dirac band: The link between the Kubo-Streda formula and the semiclassical Boltzmann equation approach

Tunnel electroresistance in junctions with ultrathin ferroelectric Pb(Zr0.2Ti0.8)O3 barriers

Proper Scaling of the Anomalous Hall Effect

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