Anomalous Hall effect superimposed in polycrystalline SrRuO3 thick film

Tian, Yingyi; Wang, Shuanhu; Wei, Xiangyang; Yang, Ruishu; Kusaka, Jin

doi:10.1063/5.0085391

Cited by 5 publications

(3 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In our case, the Hall measurement of minor loops is implemented on a 50-nm-thick Cr 5 Te 6 film, which can justifiably demonstrate the genuine THE. [62,63] Before the measurements of each minor loop, the external field is set at −3 T to ensure the saturation magnetization of the Cr 5 Te 6 films. Subsequently, the external field sweeps a minor loop with a field smaller than 3 T. Given the position of the hump (≈0.6 T), we choose 1.0, 0.6, and 0.5 T as the field of the minor loops (Figure 3a).…”

Section: Resultsmentioning

confidence: 99%

Observation of Colossal Topological Hall Effect in Noncoplanar Ferromagnet Cr₅Te₆ Thin Films

Chen

Zhu

Lin

et al. 2023

Adv Funct Materials

View full text Add to dashboard Cite

The topological Hall effect (THE) is critical to the exploration of the spin chirality generated by the real‐space Berry curvature, which has attracted worldwide attention for its prospective applications in spintronic devices. However, the prominent THE remains elusive at room temperature, which severely restricts the practical integration of chiral spin textures. Here, a colossal intrinsic THE is showed up to ≈1.6 µΩ cm in large‐area ferromagnet Cr5Te6 thin films epitaxially grown by pulsed laser deposition. Such a THE can be maintained until 270 K, which is attributed to the field‐stimulated noncoplanar spin textures induced by the interaction of the in‐plane ferromagnet and antiferromagnet infrastructures. The first‐principles calculations further verify the considerable Dzyaloshinskii‐Moriya interaction in Cr5Te6. This work not only paves the way for robust chiral spin textures near room temperature in large‐area low‐dimensional ferromagnetic films for practical applications, but also facilitates the development of high‐density and dissipationless spintronic devices.

show abstract

Section: Resultsmentioning

confidence: 99%

Observation of Colossal Topological Hall Effect in Noncoplanar Ferromagnet Cr₅Te₆ Thin Films

Chen

Zhu

Lin

et al. 2023

Adv Funct Materials

View full text Add to dashboard Cite

show abstract

“…For the SRO layer, the growth temperature was fixed at 750 °C in an oxygen atmosphere of 10 Pa, the growth rate of SRO is 36 pulses/u.c. in this condition . The LAO film was deposited at 800 °C in an oxygen atmosphere of 1 × 10 –3 Pa.…”

Section: Methodsmentioning

confidence: 99%

“…in this condition. 27 The LAO film was deposited at 800 °C in an oxygen atmosphere of 1 × 10 −3 Pa. The surface morphology of samples was characterized by MFP-3D atomic force microscopy (AFM).…”

Section: Methodsmentioning

confidence: 99%

High-Mobility Magnetic Two-Dimensional Electron Gas in Engineered Oxide Interfaces

Yang

Gao

Wang

et al. 2022

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

The engineered interfaces of complex oxides have abundant physical properties and provide a powerful platform for the exploration of fundamental physics and emergent phenomena. In particular, research on the two-dimensional magnetic systems with high mobility remains a long-standing challenge for the discovery of quantum phase and spintronic applications. Here, we introduce a few atomic layers of the delta doping layer at LaAlO3/SrTiO3 interfaces through elaborately controllable epitaxial growth of SrRuO3. After inserting a SrRuO3 buffer layer, the interfaces exhibit a well-defined anomalous Hall effect up to 100 K and their mobility is enhanced by 3 orders of magnitude at low temperatures. More intriguingly, a large unsaturated positive magnetoresistance is created at interfaces. Combining with the density functional theory calculation, we attribute our findings to the electron transfer at interfaces and the magnetic moment of Ru4+ 4d bands. The results pave a way for further research of two-dimensional ferromagnetism and quantum transport in all-oxide systems.

show abstract

Cobalt doping induced emergent humps of Hall resistance in van der Waals ferromagnetic nanodevices of (Fe0.74Co0.26)3GeTe2

Wu,

Niu,

et al. 2023

Applied Physics Letters

View full text Add to dashboard Cite

As a promising van der Waals (vdW) magnet, Fe3GeTe2 (FGT) has an inversion symmetry in structure, thus nominally prohibiting the generation of the Dzyaloshinskii–Moriya interaction and the resultant topological Hall effect (THE), which is manifested as hump-like features in transport. By virtue of doping, like the method of fabricating heterostructures, the crystal inversion symmetry of FGT could be broken artificially; therefore, humps of Hall resistance due to the THE are expected. However, alternative interpretations indicate inhomogeneity-induced multi-channel anomalous Hall effect (AHE) could also give rise to these humps. Here, besides the magnetic properties modified by Co doping, we report emergent humps in (Fe0.74Co0.26)3GeTe2 (FCGT) nanodevices. By scanning minor loops, partial anomalous Hall loops exceeding the full loop cannot be attributed to the THE, while it is in line with the multi-channel AHE scenario. These channels likely develop as a result of the Co atoms in FGT being randomly distributed, leading to multiple spatially separated magnetic regions with distinct coercive fields and magnetizations. By combing these AHE channels, the hump features in FCGT are effectively reproduced. Our work implies that the underlying multi-channel transport could also facilitate the development of versatile nanodevices utilizing the doped vdW ferromagnets.

show abstract

Anomalous Hall effect superimposed in polycrystalline SrRuO3 thick film

Cited by 5 publications

References 29 publications

Observation of Colossal Topological Hall Effect in Noncoplanar Ferromagnet Cr₅Te₆ Thin Films

Observation of Colossal Topological Hall Effect in Noncoplanar Ferromagnet Cr₅Te₆ Thin Films

High-Mobility Magnetic Two-Dimensional Electron Gas in Engineered Oxide Interfaces

Cobalt doping induced emergent humps of Hall resistance in van der Waals ferromagnetic nanodevices of (Fe0.74Co0.26)3GeTe2

Contact Info

Product

Resources

About

Anomalous Hall effect superimposed in polycrystalline SrRuO3 thick film

Cited by 5 publications

References 29 publications

Observation of Colossal Topological Hall Effect in Noncoplanar Ferromagnet Cr5Te6 Thin Films

Observation of Colossal Topological Hall Effect in Noncoplanar Ferromagnet Cr5Te6 Thin Films

High-Mobility Magnetic Two-Dimensional Electron Gas in Engineered Oxide Interfaces

Cobalt doping induced emergent humps of Hall resistance in van der Waals ferromagnetic nanodevices of (Fe0.74Co0.26)3GeTe2

Contact Info

Product

Resources

About

Observation of Colossal Topological Hall Effect in Noncoplanar Ferromagnet Cr₅Te₆ Thin Films

Observation of Colossal Topological Hall Effect in Noncoplanar Ferromagnet Cr₅Te₆ Thin Films