Anomalous Hall Effect in Variable Range Hopping Regime: Unusual Scaling Law and Sign Reversal with Temperature

Qiao, Ruimin; Shen, Yan; Xu, Tianrui; Zhao, Meng; Chen, Y. X.; Liu, G. L.; Yang, Wanli; Zheng, Rongkun; Liang-Mo, Mei

doi:10.48550/arxiv.1406.5672

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“…6 is shown with a vertical line. observed in (In 0.27 Co 0.73 ) 2 O 3−v (v denotes the oxygen vacancies) ferromagnetic semiconductors [49] in the VRH regime, particularly as the temperature was reduced and localization effects dominate. As materials like ITO are based on the In 2 O 3 oxide system where oxygen vacancies and morphology contribute to the creation of the impurity band, the observation of sign change in our ITO samples may have the same origin.…”

Section: Anomalous Hall Conductivity Near Mitmentioning

confidence: 98%

Emergence of Ferromagnetism Through the Metal-Insulator Transition in Undoped Indium Tin Oxide Films

Mumford¹,

Paul²,

Kapitulnik³

2021

Preprint

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We present a detailed study of the emergence of bulk ferromagnetism in low carrier density samples of undoped indium tin oxide (ITO). We used annealing to increase the density of oxygen vacancies and change sample morphology without introducing impurities through the metal insulator transition (MIT). We utilized a novel and highly sensitive "Corbino-disk torque magnetometry" technique to simultaneously measure the thermodynamic and transport effects of magnetism on the same sample after successive annealing. With increased sample granularity, carrier density increased, the sample became more metallic, and ferromagnetism appeared as resistance approached the MIT. Ferromagnetism was observed through the detection of magnetization hysteresis, anomalous Hall effect (AHE), and hysteretic magnetoresistance. A sign change of the AHE as the MIT is approached may elucidate the interplay between the impurity band and the conduction band in the weakly insulating side of the MIT. a

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Section: Anomalous Hall Conductivity Near Mitmentioning

confidence: 98%