Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se

Yan, Jian; Luo, X.; Chen, F. C.; Pei, Qijun; Lin, Gaoting; Han, Yunhu; Hu, Ling; Tong, P.; Song, Weiguo; Zhu, Xiaotao; Sun, Ying

doi:10.1063/1.4985224

Cited by 22 publications

(27 citation statements)

References 41 publications

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“…However, the skew scattering follows a different relation ρ A xy ∝ ρ xx . It has been demonstrated that the AHE in 2D Cr 0.68 Se, with a Néel temperature around 42 K, is dominated by the skew-scattering mechanism rather than the side-jump or KL mechanism [43]. The temperature-dependent transversal resistance ρ xy of Cr 0.68 Se is shown in Figure 4(b).…”

Section: Anomalous Hall Effect Anomalous Hall Effect (Ahe)mentioning

confidence: 98%

“…It is fundamentally different from the ordinary Hall effect (that only involves the orbital deflection of the carrier transport caused by the external magnetic field-induced Lorenz force) [42]. Basically, there are three basic mechanisms to induce AHE, as shown in Figure 4(a) [43]. The AHE can either be intrinsic or extrinsic.…”

Section: Anomalous Hall Effect Anomalous Hall Effect (Ahe)mentioning

confidence: 99%

“…(k) Magnetic transition in five-layer MnBi 2 Te 4 under H//c and H//ab at 1.6 K. (l) Hall resistivity of bulk MnBi 4 Te 7 at 2 K with H//c and I//ab. (m, n) Magnetization, Hall resistivity, and planar magnetoresistivity of few-layer MnBi 6 Te 10 with H//c of ±0.3 T (m) and MnBi 8 Te 13 with H//c of ±0.2 T (n) at 2 K. Panels (a, b) are reproduced with permission from ref [43],. copyright 2017 Applied Physics Letters.…”

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confidence: 99%

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Recent Advances in Two-Dimensional Magnets: Physics and Devices towards Spintronic Applications

et al. 2020

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The emergence of low-dimensional nanomaterials has brought revolutionized development of magnetism, as the size effect can significantly influence the spin arrangement. Since the first demonstration of truly two-dimensional magnetic materials (2DMMs) in 2017, a wide variety of magnetic phases and associated properties have been exhibited in these 2DMMs, which offer a new opportunity to manipulate the spin-based devices efficiently in the future. Herein, we focus on the recent progress of 2DMMs and heterostructures in the aspects of their structural characteristics, physical properties, and spintronic applications. Firstly, the microscopy characterization of the spatial arrangement of spins in 2D lattices is reviewed. Afterwards, the optical probes in the light-matter-spin interactions at the 2D scale are discussed. Then, particularly, we systematically summarize the recent work on the electronic and spintronic devices of 2DMMs. In the section of electronic properties, we raise several exciting phenomena in 2DMMs, i.e., long-distance magnon transport, field-effect transistors, varying magnetoresistance behavior, and (quantum) anomalous Hall effect. In the section of spintronic applications, we highlight spintronic devices based on 2DMMs, e.g., spin valves, spin-orbit torque, spin field-effect transistors, spin tunneling field-effect transistors, and spin-filter magnetic tunnel junctions. At last, we also provide our perspectives on the current challenges and future expectations in this field, which may be a helpful guide for theorists and experimentalists who are exploring the optical, electronic, and spintronic properties of 2DMMs.

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Section: Anomalous Hall Effect Anomalous Hall Effect (Ahe)mentioning

confidence: 98%

Section: Anomalous Hall Effect Anomalous Hall Effect (Ahe)mentioning

confidence: 99%

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confidence: 99%

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Recent Advances in Two-Dimensional Magnets: Physics and Devices towards Spintronic Applications

et al. 2020

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“…[32][33][34] Additionally, Cr n X (X = S, Se and Te; 0 < n < 1) possesses a number of binary compounds with different component ratios, which leads to a number of structural phases and physical properties. [35][36][37][38][39] The Cr n Se obtained thus far has mainly been in bulk state and few properties have been reported for its 2D structure. Besides, it is suspected that CrSe crystals have anomalous magnetic properties, but few works have been reported on CrSe, not to mention the synthesis of 2D CrSe crystals.…”

Section: Doi: 101002/adma201900056mentioning

confidence: 99%

Ultrathin Magnetic 2D Single‐Crystal CrSe

et al. 2019

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The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.201900056.Recently, the extensive amount of investigations into 2D materials, such as MoS 2 , [1][2][3][4] WS 2 , [5,6] MoTe 2 , [7] and NbSe 2 , [8] has revealed a wide range of intriguing electronic phenomena and performance, which is attributed to their unique structures and excellent physical properties resulting from their reduced dimensionality. [9][10][11] Among these compounds, 2D magnetic materials have rarely been reported in recent years. [12][13][14][15][16]

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“…3(b). In general, the Hall resistivity ρ xy in the ferromagnets is made up of two parts, [32][33][34][35]…”

Section: Resultsmentioning

confidence: 99%

Anomalous Hall effect in trigonal Cr$_5$Te$_8$ single crystal

Liu,

Petrovic

2018

Preprint

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We report anomalous Hall effect (AHE) and transport properties of trigonal Cr5Te8 (tr-Cr5Te8) single crystals. The electrical resistivity as well as the Seebeck coefficient shows a clear kink at the paramagnetic-ferromagnetic transition of tr-Cr5Te8, which is also confirmed by the heat capacity measurement. The scaling behavior between anomalous Hall resistivity ρ A xy and longitudinal resistivity ρxx is linear below Tc. Further analysis suggests that the AHE in tr-Cr5Te8 is dominated by the skew-scattering mechanism rather than the intrinsic or extrinsic side-jump mechanism.

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Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se

Cited by 22 publications

References 41 publications

Recent Advances in Two-Dimensional Magnets: Physics and Devices towards Spintronic Applications

Recent Advances in Two-Dimensional Magnets: Physics and Devices towards Spintronic Applications

Ultrathin Magnetic 2D Single‐Crystal CrSe

Anomalous Hall effect in trigonal Cr$_5$Te$_8$ single crystal

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