Anomalous Hall effect in IV–VI semimagnetic semiconductors

Brodowska, B.; Dobrowolski, W.; Arciszewska, Μ.; Slynko, E.I.; Dugaev, V. K.

doi:10.1016/j.jallcom.2005.12.102

Cited by 16 publications

(7 citation statements)

References 7 publications

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“…3 we present the temperature dependence of the anomalous Hall constant in two sets of ferromagnetic IV-VI compounds (see also Ref. [9] and Ref. [10]).…”

Section: Resultsmentioning

confidence: 99%

“…However, it is worth to note that in the case of the two samples (not shown in the figure), the anomalous Hall coefficient showed drastically different behavior, strong temperature dependence. The origin of this behavior has not been understood yet, but it may be connected with the presence of the inclusions of the second crystallographic or chemical phase [9].…”

Section: Resultsmentioning

confidence: 99%

“…The AHE has been measured for instance in PbSnMnTe, SnMnTe and SnMnEuTe mixed crystals containing Mn ions up to 16 at.% [8,9]. Analysis of the corresponding experimental results should take into account peculiarity of the energy spectrum of IV-VI semiconductors.…”

Section: Introductionmentioning

confidence: 99%

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Anomalous Hall Effect in IV-VI Semiconductors

et al. 2009

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We consider theoretically the topological contribution to the anomalous Hall effect in narrow-gap IV-VI magnetic semiconductors in which the relativistic terms are relatively large and determine both the non-parabolicity of the energy spectrum and strong spin-orbit interaction. We use the relativistic Dirac model and linear response theory to calculate this contribution. Experimental data on the anomalous Hall effect in these compounds are also presented and discussed.

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“…3 we present the temperature dependence of the anomalous Hall constant in two sets of ferromagnetic IV-VI compounds (see also Ref. [9] and Ref. [10]).…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Anomalous Hall Effect in IV-VI Semiconductors

et al. 2009

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“…21 Recently, the IV-VI magnetic semiconductors attract much attention mainly from the experimental point of view. [22][23][24] The anomalous Hall conductivity has been measured for instance in PbSnMnTe, SnMnTe, and also in SnM-nEuTe mixed crystals containing Mn ions up to 16 at. %.…”

Section: Introductionmentioning

confidence: 99%

Anomalous Hall effect in IV-VI magnetic semiconductors

2008

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Topological contribution to the anomalous Hall effect in IV-VI narrow-gap semiconductors with a nonzero spontaneous magnetization due to magnetic impurities is considered theoretically. The off-diagonal conductivity is calculated in the relativistic model of the IV-VI semiconductors. Spin-orbit interaction in these compounds is strong and cannot be treated perturbatively. Therefore, it is included in the Hamiltonian of a clean ͑defect-free͒ system. Geometrical interpretation of the topological contribution to the Hall conductivity is also briefly discussed.

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“…In this class of materials, deviations from stoichiometry result in a carrier density sufficiently high to produce strong ferromagnetic interactions between the localized spins. The results of recent studies [2,3] of the magnetic and transport properties of IV-VI based ferromagnetic semimagnetic semiconductors, namely PbSnMn(Eu,Er)Te and GeMnEuTe, will be presented in this paper.…”

Section: Introductionmentioning

confidence: 99%