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Yuldashev, Sh. U.; Jeon, H. C.; Im, Hyunsik; Kang, Tae Won; Furdyna, J. K.

doi:10.1103/physrevb.70.193203

Cited by 30 publications

(17 citation statements)

References 12 publications

(10 reference statements)

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“…Such a correlation between AHE, MR, and magnetization is usually considered as the signature of FMS, [46,47] where the same set of holes contribute to ferromagnetism and transport [10]. The Curie temperature is around 7.5 K. This also has been observed in compensated GaAs:Mn [61] and insulating GaP:Mn [62]. However, to our knowledge, the correlation between AHE, MR, and magnetization has never been observed for other Ge:Mn samples.…”

Section: Mn-doped Gementioning

confidence: 97%

Mn-doped Ge and Si: A Review of the Experimental Status

Zhou

Schmidt

2010

Materials

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Diluted ferromagnetic semiconductors (FMS) are in the focus of intense research due to their potential applications in spintronics and their striking new physical properties. So far Mn-doped III-V compound semiconductors such as GaMnAs are the most important and best understood ones, but they are ferromagnetic only at well below room temperature. An interesting alternative could be magnetic semiconductors based on elemental semiconductors, also owing to their compatibility with Si microelectronics. In the last decades, considerable amount of work has been devoted to fabricate Mn-doped Ge and Si FMS. In this article, the structural, magnetic and magneto-transport properties of Mn-doped Ge and Si will be reviewed.

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Section: Mn-doped Gementioning

confidence: 97%

Mn-doped Ge and Si: A Review of the Experimental Status

Zhou

Schmidt

2010

Materials

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“…25͒ and Te-doped MnGaAs. 26 It is of interest to explore how the coherent GeMn tadpoles were formed during the GeMn epitaxially grown on Si with a Ge buffer layer. It has been reported that coherent growth can be achieved by spinodal decomposition in magnetic impurities doped semiconductors, such as ͑Ga,Mn͒As, ͑Ga,Mn͒N, and ͑Zn,Cr͒Te magnetic semiconductors.…”

Section: ͑A͔͒ Clearly Indicating That Mn Is Rich Inside the Tadpolementioning

confidence: 99%

Tadpole shaped Ge0.96Mn0.04 magnetic semiconductors grown on Si

Wang

Xiu

Zou

et al. 2010

Applied Physics Letters

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Magnetic and structural properties of a Ge0.96Mn0.04 thin film grown on Si has been investigated by transmission electron microscopy and superconducting quantum interference device. Tadpole shaped coherent GeMn clusters induced by spinodal decomposition were revealed in the film. Although these coherent clusters are dominant, Mn5Ge3 precipitates can be still detectable, contributing to a complex ferromagnetism. The Ge buffer layer, by relieving the misfit strain between Si and Ge, can significantly reduce the density of lattice defects in the subsequent GeMn layer. Our findings unveil a particular morphology of GeMn clusters, which would contribute to better understand the GeMn system.

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“…The hole concentration is the critical parameter for FMS behavior, as seen for GaAs:Mn. 25 A large enough hole concentration ͑2.1ϫ 10 20 cm −3 ͒ gives rise to the carrier-mediated ferromagnetism throughout the Ge:Mn sample presented here. In addition to the sample discussed here, we also investigated Ge:Mn samples with lower hole concentration.…”

Section: Theoretical Picture Of Ge:mnmentioning

confidence: 97%

Hysteresis in the magnetotransport of manganese-doped germanium: Evidence for carrier-mediated ferromagnetism

et al. 2010

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We report the fabrication of Ge:Mn ferromagnetic semiconductors by Mn-ion implantation into Ge followed by pulsed laser annealing. Benefiting from the short time annealing, the hole concentration in Mn-implanted Ge has been increased by two orders of magnitude from 10 18 to over 10 20 cm −3 . Likely due to the high hole concentration, we observe that the longitudinal and Hall resistances exhibit the same hysteresis as the magnetization, which is usually considered as a sign of carrier-mediated ferromagnetism.

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Anomalous Hall effect in insulatingGa1−xMnxAs

Abstract: We have investigated the effect of doping by Te on the anomalous Hall effect in Ga 1-

Cited by 30 publications

References 12 publications

Mn-doped Ge and Si: A Review of the Experimental Status

Mn-doped Ge and Si: A Review of the Experimental Status

Tadpole shaped Ge0.96Mn0.04 magnetic semiconductors grown on Si

Hysteresis in the magnetotransport of manganese-doped germanium: Evidence for carrier-mediated ferromagnetism

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