Anomalous hall effect in HoB12

Sluchanko, N. E.; Sluchanko, D.N.; Ġlushkov, V. V.; Demishev, S. V.; Samarin, N. A.; Shitsevalova, N. Yu.

doi:10.1134/s0021364007210102

JETP Letters

2008

DOI: 10.1134/s0021364007210102

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Anomalous hall effect in HoB12

N. E. Sluchanko

D.N. Sluchanko

V. V. Ġlushkov

et al.

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Cited by 16 publications

(29 citation statements)

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“…Theoretical results are found to be in agreement with high precision measurements of the Hall R H (T) coefficient which were carried out on single crystals of the rare earth dodecaborides RB 12 (R = Ho, Er, Tm, Lu) at temperatures 1.8-300 K. A nature of the antiferromagnetic ordering in RB 12 is investigated within the RKKY-like model, which was supplemented by comprehensive electronic structure calculations for paramagnetic, ferromagnetic and antiferromagnetic phases. Though a number of experimental and theoretical investigations were carried out for RB 12 [1,[5][6][7][8][9], the mechanisms of microscopic magnetic interactions, as well as fine details of the electronic structure in these compounds, are still not clear.In order to elucidate the origin of principal interactions and electronic states responsible for magnetic ordering in RB 12 , the high precision measurements of the Hall resistivity r H (j, T, H) were carried out for HoB 12 , ErB 12 , TmB 12 and LuB 12 compounds within a wide temperature range of 1.8-300 K in magnetic fields up to 80 kOe [6,7].Based on the measured Hall coefficients of RB 12 [6,7], the corresponding values of normalized charge carrier concentration n/n 4f = (R H en 4f ) -1 are evaluated and presented in Fig. 1.…”

mentioning

confidence: 99%

mentioning

confidence: 99%

“…Though a number of experimental and theoretical investigations were carried out for RB 12 [1,[5][6][7][8][9], the mechanisms of microscopic magnetic interactions, as well as fine details of the electronic structure in these compounds, are still not clear.…”

mentioning

confidence: 99%

“…Based on the measured Hall coefficients of RB 12 [6,7], the corresponding values of normalized charge carrier concentration n/n 4f = (R H en 4f ) -1 are evaluated and presented in Fig. 1.…”

mentioning

confidence: 99%

“…In order to elucidate the origin of principal interactions and electronic states responsible for magnetic ordering in RB 12 , the high precision measurements of the Hall resistivity r H (j, T, H) were carried out for HoB 12 , ErB 12 , TmB 12 and LuB 12 compounds within a wide temperature range of 1.8-300 K in magnetic fields up to 80 kOe [6,7].…”

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confidence: 99%

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Hall effect and magnetic ordering in RB12

Baranovskiy

Grechnev

Shitsevalova

et al. 2009

Low Temperature Physics

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The concentration of carriers in LuB 12 is evaluated theoretically by applying ab initio FP-LMTO calculations. Theoretical results are found to be in agreement with high precision measurements of the Hall R H (T) coefficient which were carried out on single crystals of the rare earth dodecaborides RB 12 (R = Ho, Er, Tm, Lu) at temperatures 1.8-300 K. A nature of the antiferromagnetic ordering in RB 12 is investigated within the RKKY-like model, which was supplemented by comprehensive electronic structure calculations for paramagnetic, ferromagnetic and antiferromagnetic phases. Though a number of experimental and theoretical investigations were carried out for RB 12 [1,[5][6][7][8][9], the mechanisms of microscopic magnetic interactions, as well as fine details of the electronic structure in these compounds, are still not clear.In order to elucidate the origin of principal interactions and electronic states responsible for magnetic ordering in RB 12 , the high precision measurements of the Hall resistivity r H (j, T, H) were carried out for HoB 12 , ErB 12 , TmB 12 and LuB 12 compounds within a wide temperature range of 1.8-300 K in magnetic fields up to 80 kOe [6,7].Based on the measured Hall coefficients of RB 12 [6,7], the corresponding values of normalized charge carrier concentration n/n 4f = (R H en 4f ) -1 are evaluated and presented in Fig. 1. Here n and n 4f are the numbers of carriers and rare earth atoms per the primitive cell correspondingly and R H is the Hall coefficient. As can be seen in Fig. 1, the temperature dependences of the charge carrier concentration are distinct from each other for the nonmagnetic LuB 12 and magnetic dodecaborides. In particular, a pronounced anomaly of n/n 4f (T) is revealed in LuB 12 at T* » 56 K, whereas magnetic compounds HoB 12 , ErB 12 and TmB 12 demonstrate a weak enough variation of the carrier concentration n at intermediate temperatures. Indeed, on the average, the n/n 4f value is varied within about 10% through the paramagnetic region of RB 12 series, namely 2.0-2.2. It should be stressed that this result contradicts to the assumption that the conduction band in RB 12 compounds is formed by only one 5d electron of a rare earth element [10]. To shed

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confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

“…Based on the measured Hall coefficients of RB 12 [6,7], the corresponding values of normalized charge carrier concentration n/n 4f = (R H en 4f ) -1 are evaluated and presented in Fig. 1.…”

mentioning

confidence: 99%

mentioning

confidence: 99%

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Hall effect and magnetic ordering in RB12

Baranovskiy

Grechnev

Shitsevalova

et al. 2009

Low Temperature Physics

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Anomalous charge transport in RB₁₂ (R = Ho, Er, Tm, Lu)

Sluchanko

Богомолов

Ġlushkov

et al. 2006

Physica Status Solidi (b)

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High precision measurements of Hall RH(T) and Seebeck S(T) coefficients have been carried out for the first time on single crystals of rare earth dodecaborides RB12 (R = Ho, Er, Tm, Lu) at temperatures 1.8–300 K. Low temperature anomalies detected on the temperature dependencies of RH(T) and S(T) are associated with antiferromagnetic phase transitions in HoB12, ErB12 and TmB12 compounds. The observed discrepancy between the change of charge carriers' mobility and de‐Gennes factor (g – 1)2 J(J + 1) (J – angular momentum of the 4f shell) in the set of HoB12–TmB12 allows us to conclude about the appreciable influence of spin fluctuations on the charge transport in these compounds with B12 atomic clusters. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Phonon drag induced by Einstein mode in ZrB₁₂

Ġlushkov

Ignatov

Demishev

et al. 2006

Physica Status Solidi (b)

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The nature of superconductivity discovered in ZrB 12 forty years ago [1] stays the subject of debates up to now [2][3][4][5][6]. The commonly used approach to ZrB 12 as a strongly coupled s-wave superconductor (T c ≈ 5.8-6.2 K) [2][3][4] fails to explain the linear temperature dependencies of the penetration depth λ(T) and the upper critical field H c2 (T) suggesting a d-type rather than a s-type pairing [6]. The very small variation of T c observed for the boron isotope effect [7] provides a strong argument favoring the dominant contribution of the Zr-related phonon modes. Additionally, there is no consensus whether the electronphonon coupling is resulting from a broad phonon distribution, which can be modeled by a Debye spectrum [6], or rather due to a single phonon mode (or a few separated phonon modes) [3] described by the Einstein model. Moreover, a high enough density of the zirconium 4d-states in the conduction band [8] may lead to various correlation effects affecting the transport properties of ZrВ 12 .Important information about the microscopic parameters of ZrB 12 could be provided by the Seebeck effect, which is very sensitive to the features of the electron and phonon spectra and the electron-phonon interaction [9]. In this paper we present the first experimental study of the thermopower performed on single crystals of ZrВ 12 at temperatures 2.5-300 K in magnetic field H < 1 kOe. The temperature dependences of the Seebeck coefficient S(T) were measured by an original four probe technique [10] with a step-by-step variation of the temperature gradient (∇ T || [110] ⊥ H) in the steady magnetic field (H < 1 kOe). To exclude any influence of the usually applied superconducting solders (Pb/Sn, In), the thermoelectric probe pairs (Cu(Fe)-chromel) were welded by an electric discharge and mounted to the sample by silver paint. The precision temperature stabilization (from ~0.01 K at T < 30 K to ~0.1 K at T = 300 K) in combination with the accurate thermoelectric voltage measurements provided by two nanovoltmeters (Keithley 2182) allowed measuring S(T) with a resolution not less than 50 nV/K at helium temperatures.The experiments were carried out on single crystals grown by crucible-less inductive zone melting in argon gas atmosphere [11]. The quality of crystals was controlled by X-ray diffraction and electron microscopy. Special attention has been paid to avoid inclusions of the ZrB 2 phase in the ZrВ 12 crystals. For characterization of the ZrВ 12 samples, resistivity ρ(T,H) studies in magnetic field up to 7 T and static magnetization M(T,H) measurements were also performed. The residual resistivity ratio (ρ(293 K)/ρ(6.2 K) ≈ 8.2) as well as the high enough value of the superconducting transition temperatureWe report on the first measurements of the Seebeck effect for single crystals of superconductor ZrB 12 (T c ≈ 6.1 K) at temperatures 2.5 -300 K in magnetic fields H 0 < 1 kOe. The experimental data evidently prove that the Seebeck coefficient S(T ) at T > 20 K is controlled by the electron coupling to a ...

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Anomalous hall effect in HoB12

Cited by 16 publications

References 7 publications

Hall effect and magnetic ordering in RB12

Hall effect and magnetic ordering in RB12

Anomalous charge transport in RB₁₂ (R = Ho, Er, Tm, Lu)

Phonon drag induced by Einstein mode in ZrB₁₂

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About

Anomalous hall effect in HoB12

Cited by 16 publications

References 7 publications

Hall effect and magnetic ordering in RB12

Hall effect and magnetic ordering in RB12

Anomalous charge transport in RB12 (R = Ho, Er, Tm, Lu)

Phonon drag induced by Einstein mode in ZrB12

Contact Info

Product

Resources

About

Anomalous charge transport in RB₁₂ (R = Ho, Er, Tm, Lu)

Phonon drag induced by Einstein mode in ZrB₁₂