Anomalous Hall and Nernst effects in ferrimagnetic Mn4N films: Possible interpretations and prospects for enhancement

Isogami, Shinji; Masuda, Keisuke; Miura, Yoshio; Rajamanickam, N.; Sakuraba, Yuya

doi:10.1063/5.0039569

Cited by 28 publications

(23 citation statements)

References 36 publications

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“…Indeed, record-high SANE values of 23 μV K −1 in UCo0.8Ru0.2Al at low temperature [36], or 5-8 μV K −1 in L21-Co2MnGa and Co2Mn(Al,Si) at room temperature have been reported in such topological materials [14,16,23,25,27]. In additional, magnetic materials with other properties that are favored in applications, e.g., small magnetization [11,13,18,29,34,38], negative value of SANE [7,30], or large magnetic anisotropy [30,34,39] have also received attention to their transverse thermoelectric phenomena. Although orders of magnitude enhancement of SANE has been made in recent year from that of the traditional magnetic materials like Fe, Co, and Ni, the thermopower is still small compared to that of the SE and further enhancement is strongly required for practical applications.…”

Section: Introductionmentioning

confidence: 99%

Seebeck-driven transverse thermoelectric generation

et al. 2021

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An unconventional approach to enhance the transverse thermopower by combining magnetic and thermoelectric materials, namely the Seebeck-driven transverse thermoelectric generation (STTG), has been proposed and demonstrated recently. Here, we improve on the previously used sample structure and achieve large transverse thermopower over 40 μV K −1 due to STTG in on-chip devices. We deposited polycrystalline Fe-Ga alloy films directly on n-type Si substrates, where Fe-Ga and Si serve as the magnetic and thermoelectric materials, respectively. Using microfabrication, contact holes were created through the SiOx layer at the top of Si to electrically connect the Fe-Ga film with the Si substrate. These thin devices with simple structure clearly exhibited enhancement of transverse thermopower due to STTG, and the obtained values agreed well with the estimation over a wide range of the size ratio between the Fe-Ga film and the Si substrate.

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Section: Introductionmentioning

confidence: 99%

Seebeck-driven transverse thermoelectric generation

et al. 2021

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“…demonstrated a SOT‐CIMS in ferrimagnetic Mn 4 N/Pt bilayer systems, [ 144 ] where the Mn 4 N belongs to the Fe 4 N system family and exhibits perpendicular magnetic anisotropy (PMA). [ 60–64 ] These results demonstrate the potential for advanced spintronic materials with high performance beyond the existing CoFeB‐based SOT‐induced switching devices.…”

Section: Spintronic Applicationsmentioning

confidence: 85%

Section: Synthesis Of Antiperovskite Materialsmentioning

confidence: 99%

“…As indicated by Figure 2, applications have been extended beyond the existing magnets, leading to spintronics, such as tunneling magnetoresistance (TMR) and giant magnetoresistance (GMR). [18][19][20][21][22][23][24][25][26][27][28][29] In particular, inverse TMR effect, [30,31] anomalous Hall and Nernst effects, [32,33] domain wall propagation, [34,35] and skyrmions [36][37][38][39] are the important phenomena for recent spintronics. To realize these devices, the development of practical magnetic and spintronic materials has been indispensable.…”

Section: Introductionmentioning

confidence: 99%

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Antiperovskite Magnetic Materials with 2p Light Elements for Future Practical Applications

Isogami

Takahashi

2022

Adv Elect Materials

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Light elements having 2p electrons such as B, C, and N are common elements that have played an important role in various functional materials. In particular, nitrides have long been used in the development of semiconductors, superconductors, and magnets. More recently, Fe‐ and Mn‐based antiperovskite‐type compounds with light elements have attracted considerable attention in the field of spintronic engineering, because of the development of intriguing and practical applications making them one of the key materials for future devices. In this article, it is first reviewed the evolution of applications and which light elements are employed. Then the representative applications and characteristics of the light elements, including magnetoresistive effects, magnetization switching, current‐spin and thermoelectric conversions, magnetic anisotropy, and domain nucleation are individually highlighted. Additionally, the crystal structure, fundamental properties, and theoretical study are addressed to enable a deeper understanding of the role of light elements in the unit cell. Beyond compounds with N, a demonstration using B and C is discussed to examine their effect on the magnetic structures of antiperovskite compounds. Finally, prospective and future strategies are discussed to build a platform of practical material based on light elements.

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“…The noncollinear manganese nitride Mn 4 N and related ternary alloys Mn 4−x Z x N (Z is a nonmagnetic dopant) with the perovskite structure are attractive because of the opportunities they offer [6] for combining compensated ferrimagnetism [10,11] with good electrical and thermal transport properties [12], strain sensitivity [13], first-order phase transitions [14], magnetic skyrmions [15], and magneto-optic spintronics [16]. Bulk Mn 4 N crystallizes in space-group Pm 3m where N is in octahedral coordination at the body-centered interstitial site of a Mn face-centered-cubic lattice.…”

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confidence: 99%

Noncollinear ferrimagnetism and anomalous Hall effects in Mn4N thin films

Lenne

Gercsi

et al. 2022

Phys. Rev. B

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Thin films of Mn 4 N and related ternary metallic perovskites with perpendicular anisotropy are interesting for spintronics, but their magnetic structures differ from the triangular ferrimagnetism of the bulk. A temperature-independent anomalous Hall conductivity of −90 -1 cm -1 was found in Mn 4 N films, in addition to the normal temperature-dependent contribution. Based on known spin structures of bulk Mn 3 ZN compounds and the distance dependence of the Mn-Mn exchange for first-and second-neighbor Mn-Mn pairs, we propose a topological noncollinear spin structure for the Mn 4 N films with perpendicular anisotropy. The Letter shows how a small change in symmetry of the spin structure can influence the magnetotransport properties of frustrated ferrimagnetic films.

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Anomalous Hall and Nernst effects in ferrimagnetic Mn4N films: Possible interpretations and prospects for enhancement

Cited by 28 publications

References 36 publications

Seebeck-driven transverse thermoelectric generation

Seebeck-driven transverse thermoelectric generation

Antiperovskite Magnetic Materials with 2p Light Elements for Future Practical Applications

Noncollinear ferrimagnetism and anomalous Hall effects in Mn4N thin films

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