2019
DOI: 10.1063/1.5058150
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Anomalous electric transport across Verwey transition in nanocrystalline Fe3O4 thin films

Abstract: Charge ordering (Fe +3 /Fe +2) is a key concept in the Verwey transition of Fe 3 O 4 because it frequently competes with functional properties (half-metallicity/ferromagnetism and structural transformation) and quantum confinement effect, especially at nanoscale dimensions. In this paper, we report the fabrication of nanocrystalline Fe 3 O 4 thin films via two different reduction routes, namely, vacuum annealing and wet H 2 annealing. While vacuum annealed films exhibit Verwey transition and resistivity values… Show more

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Cited by 11 publications
(5 citation statements)
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“…This transition can also happen even if there is no structural transition but if there is a change in anisotropy. We now argue that charge order is triggered by the structural transition and it has nothing to do with magnetic ordering, as discussed by us elsewhere [28]. So the absence of VT in electronic transport may have a different origin like grain boundary volume, and defects/vacancies induced intergranular strain in nanocrystalline Fe 3 O 4 films that suppress the resistivity change caused during VT [28].…”
Section: Observation Of Verwey Transition In Various Fe 3 O 4 Nanostrmentioning
confidence: 61%
See 1 more Smart Citation
“…This transition can also happen even if there is no structural transition but if there is a change in anisotropy. We now argue that charge order is triggered by the structural transition and it has nothing to do with magnetic ordering, as discussed by us elsewhere [28]. So the absence of VT in electronic transport may have a different origin like grain boundary volume, and defects/vacancies induced intergranular strain in nanocrystalline Fe 3 O 4 films that suppress the resistivity change caused during VT [28].…”
Section: Observation Of Verwey Transition In Various Fe 3 O 4 Nanostrmentioning
confidence: 61%
“…[23][24][25]. Previously, the author has worked extensively on oxide films, and we consider that the PLD [26][27][28] is the most suitable technique for stoichiometric growth of complex oxides. The deposition of Fe 3 O 4 has been performed in a reducing atmosphere (under the vacuum of 1 × 10 −5 mbar and substrate temperature, T S : RT-850°C) from the α-Fe 2 O 3 target on an amorphous quartz substrate [26].…”
Section: Observation Of Verwey Transition In Various Fe 3 O 4 Nanostrmentioning
confidence: 99%
“…Basically, the fluctuation of electrons freezes below the Verwey transition and results in trimerons through the localization of electrons, which are distributed over the three-Fe-site unit [Fe 3+ –Fe 2+ –Fe 3+ ] with an approximate coherence length of 0.63 nm. Importantly, the low-temperature resistivity data of the Fe 3 O 4 nanowire with the volume of 50 × 50 × 10 nm 3 provide a better estimation of the coherence length of a trimeron than other reported values obtained from thin films , because of the accessibility of a small number of trimerons in an ultrasmall Fe 3 O 4 nanowire with a small number of defects. The observation of the coherence length of a trimeron in addition to the good physical properties of an ultrasmall Fe 3 O 4 nanostructure are very attractive from both fundamental and application perspectives.…”
mentioning
confidence: 67%
“…It has been described as a first-order metal-insulator transition accompanied by a structural phase transition during which the cubic symmetry of the Fe 3 O 4 crystal is broken by a small lattice distortion while cooling through the transition temperature of 123 K [2][3][4]. Verwey transition in Fe 3 O 4 nanocrystals has been observed by means of magnetization versus temperature measurements [5][6][7], photoelectron spectroscopy [8,9], electron paramagnetic resonance [10], electric transport characterization [11], and also by heat capacity measurements [12]. Recently, evo lution of magnetic domains [13] and anisotropic magnetoresistance [14] have been reported in epitaxial magnetite thin-films across the transition.…”
Section: Introductionmentioning
confidence: 99%