2008
DOI: 10.1002/pssc.200777561
|View full text |Cite
|
Sign up to set email alerts
|

Anomalous electric‐field effect and glassy behaviour in granular aluminium: electron glass?

Abstract: Abstract. We present a study of non-equilibrium phenomena observed in the electrical conductance of insulating granular aluminium thin films. An anomalous field effect and its slow relaxation are studied in some detail. The phenomenology is very similar to the one already observed in indium oxide. The origin of the phenomena is discussed. In granular systems, the present experiments can naturally be interpreted along two different lines. One relies on a slow polarisation in the dielectric surrounding the metal… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
2
0

Year Published

2010
2010
2010
2010

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(2 citation statements)
references
References 34 publications
0
2
0
Order By: Relevance
“…Thus we have discussed two different mechanisms of slow relaxations (of magnetoresistance) in response to time-dependent external magnetic field, both related to the polaron effect. The first one is to some extent similar to the effect of the gate voltage [8,9,10,11,12,13]. It is induced by magnetic-field-driven shift of the chemical potential.…”
Section: Theoretical Modelmentioning
confidence: 88%
See 1 more Smart Citation
“…Thus we have discussed two different mechanisms of slow relaxations (of magnetoresistance) in response to time-dependent external magnetic field, both related to the polaron effect. The first one is to some extent similar to the effect of the gate voltage [8,9,10,11,12,13]. It is induced by magnetic-field-driven shift of the chemical potential.…”
Section: Theoretical Modelmentioning
confidence: 88%
“…It worth noting that the slow relaxations in response to variations of the gate voltage are usually not observed in doped crystalline semiconductors -the experiments [8,9,10,11,12,13] were performed using samples with significant amount of disorder. We believe that there two reasons for that: (i) the TLSinduced polaron effects are much weaker that a direct influence of the gate voltage on the DOS; (ii) relatively large sweep rates of the gate voltage probably lead to pronounced nonequilibrium behaviors.…”
Section: Theoretical Modelmentioning
confidence: 99%