Anomalous effect of temperature on atomic layer deposition of titanium dioxide

Aarik, Jaan; Aidla, Aleks; Mändar, Hugo; Sammelselg, Väinö

doi:10.1016/s0022-0248(00)00897-6

Cited by 122 publications

(104 citation statements)

References 17 publications

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“…While typical ALD processes show a plateau of the GPC in an ALD temperature window, the GPC of our TiO 2 ALD from TiCl 4 for which the number of cycles was 3000 cycles. 23 They proposed that crystallization of TiO 2 results in surface roughening and increase in surface area. Larger amounts of precursors are adsorbed on the surface, and consequently an additional increase in the GPC is obtained.…”

Section: Resultsmentioning

confidence: 99%

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Role of HCl in Atomic Layer Deposition of TiO₂Thin Films from Titanium Tetrachloride and Water

Leem¹,

Park²,

Li³

et al. 2014

Bulletin of the Korean Chemical Society

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Atomic layer deposition (ALD) of TiO 2 thin film from TiCl 4 and H 2 O has been intensively studied since the invention of ALD method to grow thin films via chemical adsorptions of two precursors. However the role of HCl which is a gaseous byproduct in ALD chemistry for TiO 2 growth is still intriguing in terms of the growth mechanism. In order to investigate the role of HCl in TiO 2 ALD, HCl pulse and its purging steps are inserted in a typical sequence of TiCl 4 pulse-purge-H 2 O pulse-purge. When they are inserted after the first-half reaction (chemisorption of TiCl 4 ), the grown thickness of TiO 2 becomes thinner or thicker at lower or higher growth temperatures than 300 o C, respectively. However the insertion after the second-half reaction (chemisorption of H 2 O) results in severely reduced thicknesses in all growth temperatures. By using the result, we explain the growth mechanism and the role of HCl in TiO 2 ALD.

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Section: Resultsmentioning

confidence: 99%

“…Although ALD of TiO 2 from TiCl 4 and water has been intensively investigated since the invention of the ALD method, [14][15][16][17][18][19][20][21][22][23][24][25][26][27] the role of HCl is not clear yet. Here we investigate the role of HCl which may be one of origins for the non-ideality in TiO 2 ALD.…”

Section: Introductionmentioning

confidence: 99%

Role of HCl in Atomic Layer Deposition of TiO₂Thin Films from Titanium Tetrachloride and Water

Leem¹,

Park²,

Li³

et al. 2014

Bulletin of the Korean Chemical Society

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“…Other details of the ALD processes used, and some parameters of the thin films deposited (for example, growth rate and dependence of the surface roughness on the deposition temperature), are described in our earlier reports [21,23,24,34,35]. PLD was carried out under an oxygen pressure of 10 −3 mbar using a KrF excimer laser with a wavelength of 248 nm and pulse frequency of 10 Hz.…”

Section: Methodsmentioning

confidence: 99%

Structural study of TiO2 thin films by micro-Raman spectroscopy

et al. 2006

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Abstract:The Raman spectroscopy method was used for structural characterization of TiO 2 thin films prepared by atomic layer deposition (ALD) and pulsed laser deposition (PLD) on fused silica and single-crystal silicon and sapphire substrates. Using ALD, anatase thin films were grown on silica and silicon substrates at temperatures 125-425 • C. At higher deposition temperatures, mixed anatase and rutile phases grew on these substrates. Post-growth annealing resulted in anatase-to-rutile phase transitions at 750 • C in the case of pure anatase films. The films that contained chlorine residues and were amorphous in their as-grown stage transformed into anatase phase at 400 • C and retained this phase even after annealing at 900 • C. On single crystal sapphire substrates, phase-pure rutile films were obtained by ALD at 425 • C and higher temperatures without additional annealing. Thin films that predominantly contained brookite phase were grown by PLD on silica substrates using rutile as a starting material.

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“…This is not uncommon for ALD, and enhanced GPC values on crystalline surfaces have for example also been observed for MoOx and TiO2. [21][22][23] In fact, from AFM (Figures S1 and S2 in the supplementary material) it is deduced that the crystallites can protrude up to ~25 nm from the surface. Since the film is 75 nm thick, this suggests an enhancement in GPC of at least 33% on the crystalline surface, if the crystallites were to nucleate directly at the start of the film deposition.…”

Section: A Influence Of the Deposition Temperature On Film Crystallimentioning

confidence: 99%

On the solid phase crystallization of In2O3:H transparent conductive oxide films prepared by atomic layer deposition

Macco

Verheijen

Black

et al. 2016

Journal of Applied Physics

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Document VersionAccepted manuscript including changes made at the peer-review stage Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. ABSTRACTHydrogen-doped indium oxide (In2O3:H) has emerged as a highly transparent and conductive oxide, finding its application in a multitude of optoelectronic devices. Recently, we have reported on an atomic layer deposition (ALD) process to prepare high quality In2O3:H. This process consists of ALD of In2O3:H films at 100 o C, followed by a solid phase crystallization step at 150-200 o C. In this work, we report on a detailed electron microscopy study of this crystallization process which reveals new insights into the crucial aspects for achieving the large grain size and associated excellent properties of the material. The key finding is that the best optoelectronic properties are obtained by preparing the films at the lowest possible temperature prior to post-deposition annealing. Electron microscopy imaging shows that such films are mostly amorphous, but feature a very low density of embedded crystallites. Upon post-deposition annealing, crystallization proceeds merely from isotropic crystal grain growth of these embedded crystallites rather than by the formation of additional crystallites. The

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Anomalous effect of temperature on atomic layer deposition of titanium dioxide

Cited by 122 publications

References 17 publications

Role of HCl in Atomic Layer Deposition of TiO₂Thin Films from Titanium Tetrachloride and Water

Role of HCl in Atomic Layer Deposition of TiO₂Thin Films from Titanium Tetrachloride and Water

Structural study of TiO2 thin films by micro-Raman spectroscopy

On the solid phase crystallization of In2O3:H transparent conductive oxide films prepared by atomic layer deposition

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Anomalous effect of temperature on atomic layer deposition of titanium dioxide

Cited by 122 publications

References 17 publications

Role of HCl in Atomic Layer Deposition of TiO2Thin Films from Titanium Tetrachloride and Water

Role of HCl in Atomic Layer Deposition of TiO2Thin Films from Titanium Tetrachloride and Water

Structural study of TiO2 thin films by micro-Raman spectroscopy

On the solid phase crystallization of In2O3:H transparent conductive oxide films prepared by atomic layer deposition

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Role of HCl in Atomic Layer Deposition of TiO₂Thin Films from Titanium Tetrachloride and Water

Role of HCl in Atomic Layer Deposition of TiO₂Thin Films from Titanium Tetrachloride and Water