Anomalous Doping Effects on Charge Transport in Graphene Nanoribbons

Biel, Blanca; Blase, Xavier; Triozon, François; Roche, Stephan

doi:10.1103/physrevlett.102.096803

Cited by 338 publications

(247 citation statements)

References 57 publications

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“…55 Doping by substitutional impurities is quite straightforward if B atoms (p-doping) or N atoms (n-doping) are used. However, these substitutional dopants lead to resonant scattering effects 118 that strongly depend on the distribution of the dopants and on the geometry of the graphene ribbons.…”

Section: Properties Of Defective Graphenementioning

confidence: 99%

Structural Defects in Graphene

2010

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Graphene is one of the most promising materials in nanotechnology. The electronic and mechanical properties of graphene samples with high perfection of the atomic lattice are outstanding, but structural defects, which may appear during growth or processing, deteriorate the performance of graphenebased devices. However, deviations from perfection can be useful in some applications, as they make it possible to tailor the local properties of graphene and to achieve new functionalities. In this article, the present knowledge about point and line defects in graphene are reviewed. Particular emphasis is put on the unique ability of graphene to reconstruct its lattice around intrinsic defects, leading to interesting effects and potential applications. Extrinsic defects such as foreign atoms which are of equally high importance for designing graphene-based devices with dedicated properties are also discussed.

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Section: Properties Of Defective Graphenementioning

confidence: 99%

Structural Defects in Graphene

2010

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“…For tailoring and diversifying graphene properties, defects can also be deliberately incorporated using ion irradiation or chemical treatments. As a matter of illustration, chemical substitutions of carbon atoms by nitrogen and boron (recently reported experimentally [2]) open novel ways to engineer mobility gaps [3,4] and tune the characteristics of graphene-based transistors [5].…”

Section: Introductionmentioning

confidence: 99%

Impact of Vacancies on Diffusive and Pseudodiffusive Electronic Transport in Graphene

et al. 2013

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Abstract:We present a survey of the effect of vacancies on quantum transport in graphene, exploring conduction regimes ranging from tunnelling to intrinsic transport phenomena. Vacancies, with density up to 2%, are distributed at random either in a balanced manner between the two sublattices or in a totally unbalanced configuration where only atoms sitting on a given sublattice are randomly removed. Quantum transmission shows a variety of different behaviours, which depend on the specific system geometry and disorder distribution. The investigation of the scaling laws of the most significant quantities allows a deep physical insight and the accurate prediction of their trend over a large energy region around the Dirac point.

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“…6 Since the magnetic edge states are spatially localized at the edges, they can be utilized as separate spin channels for spin-polarized quantum transport. [7][8][9][10][11][12] Furthermore, such spin channels can be switched on and off by tuning the magnetic moments of the ZGNR through external gates, which is proposed in several theoretical works. [13][14][15][16] So far, most theoretical investigations have been on freestanding ZGNRs.…”

Section: Introductionmentioning

confidence: 99%