“…Upon cooling, the resistivity follows an Arrhenius development ρ dc (T) = ρ 0 exp {∆/T}, at which ∆ is the temperature-independent activation energy, or energy gap in a semiconductor picture, respectively. In the neutral phase, the activation energy is 0.12 eV (corresponding to 1276 K), which is close to the literature values lying between 0.095 eV and 0.065 eV [9,11,12]. In the inset (e) of Figure 2, the derivative of the logarithmic resistivity is presented, in order to illustrate the variations of the slope upon cooling.…”