1975
DOI: 10.1103/physrevlett.35.876
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Anomalous Dielectric Dispersion in Glasses at Low Temperatures

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Cited by 89 publications
(34 citation statements)
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“…The saturation field is E s ϳ 2-5 kV/ m; comparable to measurements on vitreous silica. 16 Moreover, a value of E s ϳ 2-3 kV/ m has been reported for SiO 2 also by Martinis et al 12 The quality factor of the Si surface layer, assuming t = 3 nm and ⑀ h = 4, lies around 15-200, which is on the order of the value of ϳ200 reported for SiO 2 . 12 At high intensity the quality factors are temperature independent, suggesting loss other than due to TLS.…”
supporting
confidence: 55%
“…The saturation field is E s ϳ 2-5 kV/ m; comparable to measurements on vitreous silica. 16 Moreover, a value of E s ϳ 2-3 kV/ m has been reported for SiO 2 also by Martinis et al 12 The quality factor of the Si surface layer, assuming t = 3 nm and ⑀ h = 4, lies around 15-200, which is on the order of the value of ϳ200 reported for SiO 2 . 12 At high intensity the quality factors are temperature independent, suggesting loss other than due to TLS.…”
supporting
confidence: 55%
“…(68) gives G(ω) = Pµ 2 b = const. The expression for the TLS resonant-tunneling absorption, corresponding to p G = 1, was used by Bösch (1978) and Schickfus et al (1975Schickfus et al ( , 1976:…”
Section: Resonant Absorptionmentioning
confidence: 99%
“…[13][14][15][16] Such resonators have excess noise 2,17 that is equivalent to a jitter of the resonance frequency, likely caused by two-level tunneling systems ͑TLSs͒ in amorphous dielectrics. 18 Indeed, TLS models explain the unusual properties of amorphous materials at low temperatures, [19][20][21][22] and recent qubit experiments 23 have highlighted TLS effects in superconducting microcircuits. While the TLS energy splitting ⌬E has a broad distribution, 22 a resonator with frequency f r is most sensitive to TLS with ⌬E ϳ hf r .…”
mentioning
confidence: 99%