Anomalous behaviors observed in the isothermal desorption of GaAs surface oxides

Band gap widening of MBE grown InN layers by impurity incorporation

“…Ga atoms cannot reevaporate from the surface at the growth temperature of InN layers. However, Ga 2 O molecules, which may be formed on the surface by background O atoms during growth, has a considerably high enough vapor pressure to reevaporate from the surface at the growth temperature [6]. A typical absorption spectrum of InN layer grown under the low Ga beam flux irradiation is shown in Fig.…”

A quantitative study of suppression effect for oxygen contamination by Ga beam irradiation in InN RF-MOMBE growth

“…Irradiated Ga atoms during growth cannot re-evaporate from the growth surface of InN layers at the present growth temperature. However molecules such as Ga 2 O and CO 2 have considerable higher vapor pressures enough to reevaporate from the surface even at the present temperatures of $500 1C [6]. The experimental results strongly indicate that oxygen atoms on the growth surface can reevaporate easily by forming of the Ga 2 O and CO 2 molecules instead of oxygen incorpora- tion into the InN layers.…”

A control technique of oxygen contamination by Ga beam irradiation in InN MOMBE growth

“…In general, the irradiated Ga and the carbon atoms during the growth cannot re-evaporate from the growth surface of the InN layers at the present growth temperature of 550 °C. However, such as Ga 2 O and CO x molecules seem to be enough highly volatile to re-evaporate from the surface even at the present temperatures about 500 °C [5]. The experimental results strongly indicate that the oxygen atoms on the growth surface can re-evaporate easily by forming of the Ga 2 O molecules instead of the oxygen incorporation into the InN layers.…”