Anomalous band bowing in pulsed laser deposited Mg Zn1−O films

Study of nonlinear optical properties of pure and Mg-doped ZnO films

“…Similar surface signal due to V O has also been detected by performing electron paramagnetic resonance (EPR) and photoluminescence (PL) spectroscopy measurements [17]. Presuming that these energy states contribute to optical properties, the standard expression for the linear (χ (1) (th.) ) and NL (χ (3) (th.)…”

“…However, we have carefully accounted for the thickness variations in our analysis. All the films were reported to possess oxygen vacancies () as probed by X‐ray photoelectron spectroscopy (XPS) . In our samples, are expected to lie nearly 1 eV below the conduction band (), and participate in optical transitions.…”

“…The wish list further extends for the materials in which band gap engineering is possible so that heterostructures can be made for the purpose of making electronic diode structures as well as optical waveguiding. Our studies on ZnO and Mg‐doped ZnO thin films have shown promising behavior as far as the band gap engineering, transparency, and negative magnetoresistance is considered . We have shown that the defect states in the films play an important role in determining its transport and magnetotransport properties ().…”

“…) and NL (χ (3) (th.) ) susceptibilities in the density matrix analysis are given by [18,19] Im[χ (1) (th.) ] =…”

Role of Mg doping in the structural, optical, and electrical characteristics of ZnO-based DSSCs

“…Therefore, successful incorporation of Mg atoms into the ZnO host matrix leads to a wider band gap for ZnO since the electronegativity of Mg (1.23) is lower than that of Zn (1.66), which gives rise to an increase in the probability of formation of points defects like V Zn , Zn i , and O i . Compared with ZnO rods, 2 at.% and 4 at.% Mg-doped ZnO samples include more V Zn , Zn i , and O i defects (will be discussed in the PL section) as seen in Figure 8, which shows an enhancement in the band gap of ZnO [30]. However, with a further increase in the doping amount up to 6 at.% Mg, the band gap value of ZnO decreases to 3.22 eV, which could be attributed to the reduction in the population of V o defects as displayed in Figure 8.…”