Anodic Oxidation of Hydrogenated Amorphous Silicon and Properties of Oxide

Hasegawa, Hideki; Arimoto, Suguru; Nanjo, Junji; Yamamoto, Hiroyuki; Ohno, Hideo

doi:10.1149/1.2095631

Cited by 33 publications

(7 citation statements)

References 7 publications

(9 reference statements)

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“…where ν VB denotes the number of charge transfer processes via the valence band of the silicon, i.e., processes involving minority charge carriers in n-doped silicon. These holes drive the initial charge transfer step in equation (1), i.e., the inequality ν ⩾ 1 VB holds and there is no oxidation current without illumination [30]. A limited illumination and, therefore, limited generation rate of holes in the valence band of the working electrode thus introduces a cut-off for the total current.…”

Section: Introductionmentioning

confidence: 99%

Pattern formation during the oscillatory photoelectrodissolution of n-type silicon: turbulence, clusters and chimeras

et al. 2014

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We report and classify the rich variety of patterns forming spontaneously in the oxide layer during the oscillatory photoelectrodissolution of n-type doped silicon electrodes under limited illumination. Remarkably, these patterns are often comprised of several dynamical states coexisting on the electrode, such as subharmonic phase clusters and spatio-temporal chaos, and include so-called 'chimera states'. The experiments suggest that the subharmonic phase clusters emerge from a period doubling bifurcation that, upon further parameter changes, evolves into classical phase clusters. Experimentally the occurrence of the patterns is controlled via two coupling mechanisms: a linear global coupling by an external resistor and a nonlinear coupling imposed on the system by the limitation of the illumination.

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Section: Introductionmentioning

confidence: 99%

Pattern formation during the oscillatory photoelectrodissolution of n-type silicon: turbulence, clusters and chimeras

et al. 2014

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“…Light emission has been observed from thin silica films in the presence of a large applied voltage. [22][23][24] This offers a way for characterizing defects in the SiO 2 film, including in the presence of the electrolyte. Also, it is in a similar high-potential regime that anodization of aluminum leads to the formation of porous alumina, a material of high interest for the elaboration of nanostructured materials.…”

mentioning

confidence: 99%

Anodic Dissolution and Electroluminescence of p-Si at High Potentials in Fluoride Media

Lharch

Aggour

Chazalviel

et al. 2002

J. Electrochem. Soc.

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The electrochemical dissolution of silicon in fluoride media under very high potentials ͑5-100 V͒ was investigated. The interface was characterized by voltammetry and in situ infrared spectroscopy. The infrared results indicate that the interfacial oxide becomes porous above a critical potential of ϳ20 V. Light emission from the interface was observed for potentials above ϳ10 V. The electroluminescence signal was found to be composed of a red component and a blue component. Both components exhibit an increase in intensity as a function of applied potential, but their distinct dependence suggests that they arise from two distinct types of oxide defects and excitation mechanisms.In the last ten years many studies have been devoted to the anodic dissolution of silicon in fluoride media. Most of these studies have been directed to the understanding of porous silicon formation, 1 or to the complex behavior occurring in the electropolishing region, up to potentials of 5-10 V. 2-9 An especially intriguing feature was the observation of an electrochemically oscillating ͑or more exactly resonant͒ regime in the 3-8 V region, whose exact origin is not as yet perfectly understood. [10][11][12][13][14][15][16][17][18][19][20] Meanwhile, potentials above 10 V have been scarcely explored. 21 However, such studies are of interest for several reasons. Light emission has been observed from thin silica films in the presence of a large applied voltage. [22][23][24] This offers a way for characterizing defects in the SiO 2 film, including in the presence of the electrolyte. Also, it is in a similar high-potential regime that anodization of aluminum leads to the formation of porous alumina, a material of high interest for the elaboration of nanostructured materials. 25 Electrodissolution conditions offer more reproducible conditions for analyzing these phenomena in a steady state, which should bring useful pieces of information on the transport mechanisms in the oxide film.The present paper represents an attempt to explore p-Si dissolution in dilute fluoride electrolytes, in a potential range extending up to ϩ100 V. The electrochemical behavior was investigated using voltammetry on a rotating disk electrode, and the oxide film was characterized by in situ infrared spectroscopy. Finally, the electroluminescence spectrum was studied as a function of electrolyte and applied potential. After describing the experimental procedures in the following section, we then present the results on these three aspects and discuss the information that they bring. ExperimentalVoltammetric and electroluminescence measurements.-The samples used for the voltammetric and electroluminescence measurements were cut from p-type boron-doped silicon ingots with a resistivity of 0.31-0.5 ⍀ cm. Samples are disks of 4 mm diam and 3 mm thickness. Ohmic contacts were made on the back side using p ϩ doping ͑Au:1% Al evaporation while cooling the sample from 600°C͒ and indium or silver-epoxy soldering. The electrode was sealed with wax in a polytrifluorochloroethylene b...

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“…Unlike the reactions (R1) and (R3) which are interface reactions, reaction (R2) occurs inside the oxide volume. From the participating species we expect electrons/holes to leave/enter the oxide quickly via direct tunneling or trap hopping which has been observed in the electroluminescence spectra of electrically biased oxide films [32]. The remaining degrees of freedom in the oxide layer are then the concentrations of SiO and O 2− .…”

Section: R3mentioning

confidence: 95%

Electro-oxidation of p-silicon in fluoride-containing electrolyte: a physical model for the regime of negative differential resistance

Salman

Patzauer

Koster

et al. 2019

Eur. Phys. J. Spec. Top.

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When Si is anodically oxidized in a fluoride containing electrolyte, an oxide layer is grown. Simultaneously, the layer is etched by the fluoride containing electrolyte. The resulting stationary state exhibits a negative slope of the current-voltage characteristics in a certain range of applied voltage. We propose a physical model that reproduces this negative slope. In particular, our model assumes that the oxide layer consists of both partially and fully oxidized Si and that the etch rate depends on the effective degree of oxidation. Finally, we show that our simulations are in good agreement with measurements of the current-voltage characteristics, the oxide layer thickness, the dissolution valence, and the impedance spectra of the electrochemical system.

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Anodic Oxidation of Hydrogenated Amorphous Silicon and Properties of Oxide

Cited by 33 publications

References 7 publications

Pattern formation during the oscillatory photoelectrodissolution of n-type silicon: turbulence, clusters and chimeras

Pattern formation during the oscillatory photoelectrodissolution of n-type silicon: turbulence, clusters and chimeras

Anodic Dissolution and Electroluminescence of p-Si at High Potentials in Fluoride Media

Electro-oxidation of p-silicon in fluoride-containing electrolyte: a physical model for the regime of negative differential resistance

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