Annealing time modulated the film microstructures and electrical properties of P-type CuO field effect transistors

Yu, Yang; Yang, Jiayan; Yin, Wenlei; Huang, Fanming; Cui, Anyang; Zhang, Dongxu; Li, Wenwu; Hu, Zhigao; Chu, Junhao

doi:10.1016/j.apsusc.2019.03.130

Cited by 25 publications

(23 citation statements)

References 30 publications

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“…The peaks were resolved into two sub-peaks from metal oxygen bonds (M-O) and oxygenrelated defects bond such as oxygen deficient sites (VO) and contamination species (OH -). Generally, it is well-known that the M-O, oxygen-related defects peaks in metal oxides are located near 530.6 eV and 531.9 eV, respectively [19,25,26]. In CuxO films, the O 1s sub-peak spectra did not change much after annealing, which suggests that no transition has taken place.…”

Section: Resultsmentioning

confidence: 97%

“…Charge transport in copper oxide occurs mainly via charged Cu vacancies, which generate acceptor levels near 0.3 eV above the VBM [17,18]. To 2 of 11 obtain high-performance, copper oxide-based p-type thin-film transistors, the former studies generally reported on the effect of annealing temperature, oxygen flow ratio during growth, and external dopant concentration [19][20][21][22]. Especially, the incorporation of nitrogen was observed to improve the electrical properties of copper oxide, yet the exact mechanism was not elucidated.…”

Section: Introductionmentioning

confidence: 99%

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A Study on the Transition of Copper Oxide by the Incorporation of Nitrogen

et al. 2019

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In the present study, the effects of nitrogen incorporation on the transition of a p-type copper oxide semiconductor are investigated. The properties of sputtered copper oxide and nitrogen-incorporated copper oxide are evaluated and compared at various nitrogen gas flow rates. The results indicate that the addition of nitrogen results in an increased optical bandgap, accompanied by significantly reduced tail states compared to pristine copper oxide. In addition, X-ray diffraction and X-ray photoelectron spectroscopy reveal that the incorporation of nitrogen stimulates the transition from copper (II) oxide to copper (I) oxide.

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Section: Resultsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

A Study on the Transition of Copper Oxide by the Incorporation of Nitrogen

et al. 2019

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“…In addition, as field effect transistors, the device displayed an on/off current ratio of 10 3 and subthreshold swing value of 6.3 V/dec. These features of the FET nominate them as promising for use in electronics . Moreover, CuO/TiO 2 solar cells are reported to have the potential for revealing an efficiency of 23% under one sun irradiation .…”

Section: Introductionmentioning

confidence: 99%

“…Copper oxide thin films are under the focus of research centers and industry sectors due to their wide range of applications. They are used as super capacitors, filed effect transistors (FET), solar cells, memory devices, and catalyst materials . CuO nanosheets which are prepared by the chemical bath deposition technique and were used as electrodes in supercapacitors displayed 464 F/g at 5 mV in a 1M Na 2 SO 4 electrolyte.…”

Section: Introductionmentioning

confidence: 99%

“…These features of the FET nominate them as promising for use in electronics. 2 Moreover, CuO/TiO 2 solar cells are reported to have the potential for revealing an efficiency of 23% under one sun irradiation. 3 Furthermore, with the resistive switching characteristics, CuO memory devices are observed to switch from high resistance state to low resistance state regardless of the voltage polarity.…”

Section: Introductionmentioning

confidence: 99%

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Thickness effects on the dielectric dispersion and optical conductivity parameters of CuO thin films

Qasrawi

Hamamdah

2019

Micro & Optical Tech Letters

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In this article, the effect of film thickness on the structural, optical, dielectric, and optical conductivity parameters of CuO thin films are reported. CuO thin films which are prepared by the physical vapor deposition technique under vacuum pressure of 10−5 mbar with various thicknesses in the range of 50 to 1000 nm are observed to exhibit amorphous nature of growth. The values of the energy bands gaps, the spectral response of the dielectric constant and of the optical conductivity parameters are highly sensitive to the film thickness. Particularly, while the 50 nm thick CuO films exhibits quantum confinement which forces the material to have wide band gap (2.70 eV), the thicker films display an energy band gap in the infrared range of spectrum. It was also observed that the thicker the films, the more pronounced the nonlinear dielectric response. In addition, analysis of the optical conductivity parameters using Drude‐Lorentz approach for optical conduction has shown that the 50 nm thick films can display drift mobility value of 4.65 cm2/Vs accompanied with plasmon frequency of 1.20 GHz and free carrier density of 7.5×1017 cm3. The Drude‐Lorentz analysis has also shown that the free carrier density and the plasmon frequency of CuO decreases with increasing film thickness. This decrement is accompanied with enhancement in the drift mobility values which reaches 12.56 cm2/V s as the film thickness exceeds 250 nm. Such features of the thin layer of CuO make them suitable for the production of nano/microthin film transistors.

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Recent Progress of Solution‐Processed Copper‐based p‐Channel Thin‐Film Transistors

Al-Jawhari

2021

Adv Elect Materials

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unstoppable march of today's technology, it is of great demand to develop alternative and inexpensive processing technologies for fabricating high-performance p-channel TFTs. Ink-jet printing, by which semiconductor materials can be deposited on flexible substrates such as polymer films or paper, is one such promising alternative. [5][6][7] However, due to the difficulty in formulating the printable ink precursors of inorganic materials compared to organic ones, printing technology is generally uncommon in metal oxides TFTs, particularly in p-type channels. [8,9] Another obstacle facing this technology is how to improve the purity and densification of the metal-oxide-metal (M-O-M) framework in the solution-processed thin films at low temperatures. To resolve this problem and allow device flexibility, novel approaches based on manipulating the metal salt precursor, solvents, and postdeposition annealing methods had been established. [10,11] Stability, or reproducibility under ambient conditions of humidity and temperature, [12] is a third challenge facing solution-based oxide electronic devices. These roadblocks are common for all solution-based metal oxide thin films, yet p-type metal oxide TFTs in particular, face another essential defiance which is the lack of appropriate hole mobility. The most critical issues that solutionbased p-type metal oxide TFTs need to resolve are summarized schematically in Figure 1a.The difficulty in achieving p-type metal oxides with analogous performance to the n-type counterparts originates from the entirely different configurations of their conduction band minimum (CBM) and valence band maximum (VBM). Mainly, in metal oxides the CBM consists of metal s orbitals, offering a small electron effective mass and thus high mobility. In contrast, the VBM is principally composed of localized oxygen 2p orbitals, resulting in a large hole effective mass and accordingly low mobility. [13] Therefore, reducing the localization behavior of the VBM, via an engineered modification, is required to obtain suitable p-type oxide materials. [14] Up until now, only a few p-type oxide semiconductors (copper oxide, [15] tin monoxide, [16] and nickel oxide [17] ) were reported as active channel materials for TFTs. Their VBMs were inherently modified by the hybridization of metal (M) s states with oxygen (O) 2p states which result in delocalized VBMs and hence good holes mobility. [18] Copper oxide (Cu x O), with its native hybridization of Cu 3d and O 2p near the VBM, is one of the most promising holetransporting oxide semiconductors. [19] The copper oxide system (CuO) has two stable phases; cubic Cu 2 O (cuprous oxide) and The development of well-performing p-type semiconductors is essential in pushing transparent electronics to the next frontier. Copper oxide (Cu x O) is a potentially attractive hole-transport material for such applications because of its native p-type semi-conductivity, abundant availability, non-toxic nature, and low production cost. Solution-based processing methods offer many other...

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Annealing time modulated the film microstructures and electrical properties of P-type CuO field effect transistors

Cited by 25 publications

References 30 publications

A Study on the Transition of Copper Oxide by the Incorporation of Nitrogen

A Study on the Transition of Copper Oxide by the Incorporation of Nitrogen

Thickness effects on the dielectric dispersion and optical conductivity parameters of CuO thin films

Recent Progress of Solution‐Processed Copper‐based p‐Channel Thin‐Film Transistors

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