Annealing Temperature Effect of PbZr_0.4Ti_0.6O₃ Film on La_1/2Sr_1/2CoO₃ Bottom Electrode

Abstract

We have investigated the ferroelectric and electrical properties of PZT 40/60 films on the bottom La1/2Sr1/2CoO3(LSCO) electrode. The LSCO bottom electrode was sputtered on the SiO2/Si(100). As the annealing temperature of PZT capacitors on the LSCO is increased, the ferroelectric properties gradually increase with the annealing temperature up to 650°C. However, for the PZT capacitors annealed above 650°C, electrical measurement cannot be performed.