Annealing-temperature dependence of the thermal conductivity of LPCVD silicon-dioxide layers

Goodson, Kenneth E.; Flik, M. I.; Su, L.T.; Antoniadis, D.A.

doi:10.1109/55.244740

Cited by 85 publications

(31 citation statements)

References 6 publications

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“…The result for TEOS is in good agreement with measurements of SiO 2 made by Goodson,30,31 and the biophenyltetracarboxylic dianhydridephenylenediamine (BPDA-PDA) value agrees well with a photothermal measurement made in the laboratory. 32 The K th values for xerogel samples suggest that the conductivity decreases quickly as a function of porosity.…”

Section: Characterizing Low-k Materialssupporting

confidence: 83%

Low dielectric constant materials for advanced interconnects

Morgen

Zhao

et al. 1999

JOM

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Materials with low dielectric constants are being developed to replace silicon dioxide as interlevel dielectrics. This paper discusses material issues and the characterization of low-k materials for integration into advanced interconnects. Measurement techniques for the characterization of low-k films are discussed, and the results for several classes of low-k materials are presented. The properties of these materials are discussed in relation to structure-property relationships.

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Section: Characterizing Low-k Materialssupporting

confidence: 83%

Low dielectric constant materials for advanced interconnects

Morgen

Zhao

et al. 1999

JOM

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“…The steadystate parallel-microbridge method 15 was adapted to measure thermal resistances as small as 5ϫ10 Ϫ8 m 2 K Ϫ1 W Ϫ1 for conduction normal to thin dielectric layers at room temperature. 16,17 Smaller resistances can be measured using transient methods, which diminish the heated volume and therefore the uncertainty due to unnecessary temperature rise in the substrate. Laser heating and laser reflectance thermometry measured thermal resistances using time scales as short as a few hundred nanoseconds.…”

mentioning

confidence: 99%

Thermal conduction normal to diamond-silicon boundaries

Goodson

Käding

Rösner

et al. 1995

Applied Physics Letters

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Passive diamond layers fabricated using chemical vapor deposition can improve thermal conduction in electronic microstructures. The benefit of using diamond depends strongly on the thermal boundary resistance between active semiconducting regions, where heat is generated, and the diamond. Two independent experimental methods measure the total thermal resistance for conduction normal to 0.2, 0.5, and 2.6 μm thick diamond layers deposited on silicon, providing an upper bound for the effective silicon-diamond boundary resistance. The data agree with predictions that couple the local phonon scattering rate in the diamond to the grain size.

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“…Not very much is known about thermal properties of the other materials (CVD-oxide and SiN), and the values presented in literature seem to differ especially with the parameters of the fabrication [10].…”

Section: Polysilicon Resistorsmentioning

confidence: 90%

Determination of self-heating and thermal resistance in polycrystalline and bulk silicon resistors by DC measurements

Sauter

2005

Microelectronics Reliability

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Annealing-temperature dependence of the thermal conductivity of LPCVD silicon-dioxide layers

Cited by 85 publications

References 6 publications

Low dielectric constant materials for advanced interconnects

Low dielectric constant materials for advanced interconnects

Thermal conduction normal to diamond-silicon boundaries

Determination of self-heating and thermal resistance in polycrystalline and bulk silicon resistors by DC measurements

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