Annealing study of hydrothermally grown ZnO wafers

Role of defects in tailoring structural, electrical and optical properties of ZnO

“…Suitable choice of temperature [66,[109][110][111], time [112,113] and annealing ambient environment [76,111,114], rate of heating and cooling of annealing [22,115,116] has been proved beneficial to monitor material properties in a controllable fashion. However, an effective control over thermally generated unwanted defects could not be established till date.…”

Growth, structure, and electronic properties of nonpolar thin films on a polar substrate:Cr2O3on ZnO (0001) and ZnO (0001¯Zhu1, Morales-Acosta2, Shen3 et al. 2015Phys. Rev. B10030View full textAdd to dashboardCite

“…Prior to insertion into the UHV system, the ZnO samples were annealed in flowing air at 1200 K for 10-15 hours. 44 Upon insertion into the UHV chamber, both ZnO (0001) and ZnO (0001 ) samples were cleaned in the effluent of the oxygen plasma source at 575K for an hour to remove impurities, mainly carbon. Then the samples were sputtered with 500 eV Ar ions for 15 minutes and annealed in UHV at 575K for three cycles.…”

Schottky contacts to hydrogen doped ZnO

“…Prior to the implantation the samples were annealed in air, i.e. in an open furnace, for 1 h at 800 °C since it has been established that this procedure decreases the surface roughness and possibly improves the crystal quality [15]. Atomic force microscopy (AFM) measurements, performed using a Veeco D3100 microscope running in tapping mode, on the O-face (000 1) of the reference sample confirmed a decrease of the root mean square rough-High resistivity (≥ 1 kΩ cm) hydrothermally grown single crystal ZnO wafers were modified by hydrogen implantation.…”