Annealing Study of Erbium and Oxygen Implanted Gallium Nitride

Torvik, John T.; Feuerstein, R.J.; Qiu, C. H.; Leksono, M. W.; Pánkové, J. I.; Namavar, F.

doi:10.1557/proc-422-199

Cited by 23 publications

(12 citation statements)

References 17 publications

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“…18 For the implanted sample the peak intensity decreased by a factor of 4 and the integrated intensity decreased by a factor of 1.8 over the temperature range 11-295 K, consistent with previous reports. 4,8,9,11,12 The peak emission lifetime at 295 K was determined to be 2.3Ϯ0.1 ms which is similar to the value reported by Torvik et al 9 The band edge spectra of the two samples are provided in Fig. 2 for temperatures of 11 and 295 K. Both band edge spectra show a significant amount of structure around 390 nm at 11 K. These spectra indicate that both samples have states within the semiconductor band gap.…”

Section: ͓S0003-6951͑98͒02010-5͔supporting

confidence: 82%

“…[4][5][6][7][8][9][10][11][12] GaN is a wide band-gap III-V semiconductor useful as a short wavelength emitter and detector. 13 Previous investigations of Er luminescence in GaN:Er have been promising with most researchers finding only an ϳ50% decrease in photoluminescence intensity over the temperature range 6-300 K. 4,8,9,11 This is a significant improvement over the two-to-three order of magnitude decrease of Er luminescence intensity in GaAs:Er. 2 The studies performed on GaN:Er so far have principally focused on Er implanted into GaN.…”

Section: ͓S0003-6951͑98͒02010-5͔mentioning

confidence: 99%

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Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er

Hansen

Zhang

Perkins

et al. 1998

Applied Physics Letters

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The photoluminescence of in situ-doped GaN:Er during hydride vapor phase epitaxy was compared to an Er-implanted GaN sample. At 11 K, the main emission wavelength of the in situ-doped sample is shifted to shorter wavelengths by 2.5 nm and the lifetime is 2.1Ϯ0.1 ms as compared to 2.9Ϯ0.1 ms obtained for the implanted sample. The 295 K band edge luminescence of the in situ-doped sample was free of the broad band luminescence centered at 500 nm which dominated the spectrum of the implanted sample. Reversible changes in the emission intensity of the in situ-doped sample upon annealing in a N 2 versus a NH 3 /H 2 ambient indicate the probable role of hydrogen in determining the luminescence efficiency of these samples. © 1998 American Institute of Physics. ͓S0003-6951͑98͒02010-5͔The rare-earth element erbium in the trivalent state (Er 3ϩ ) has received considerable attention since the 4 I 13/2 → 4 I 15/2 transition at 1540 nm coincides with a minimum in loss in silica optical fibers.1 This transition occurs between energy levels within the shielded 4 f electron shell, making the optical transitions of Er 3ϩ sharp, as well as relatively insensitive to temperature and host affects.2 These luminescence properties make erbium-doped semiconductors an appealing material system for application in optoelectronic devices.One problem which plagues the development of a practical erbium-doped semiconductor device is the pronounced temperature quenching of the rare-earth luminescence within most semiconductor hosts. Favennec et al. discovered that quenching of the rare-earth luminescence was reduced in wide band-gap semiconductor hosts.3 This discovery has lead to several investigations of Er-implanted GaN. [4][5][6][7][8][9][10][11][12] GaN is a wide band-gap III-V semiconductor useful as a short wavelength emitter and detector. 13 Previous investigations of Er luminescence in GaN:Er have been promising with most researchers finding only an ϳ50% decrease in photoluminescence intensity over the temperature range 6-300 K. 4,8,9,11 This is a significant improvement over the two-to-three order of magnitude decrease of Er luminescence intensity in GaAs:Er. 2The studies performed on GaN:Er so far have principally focused on Er implanted into GaN. The large mass of the Er implant species limits this technique to the formation of thin layers of GaN:Er with a high amount of residual implantrelated damage. In this letter, we report a photoluminescence study of in situ-doped GaN:Er during hydride vapor phase epitaxy ͑HVPE͒ using elemental Er as the in situ dopant and Er implanted into nominally undoped GaN also grown by HVPE. HVPE is an established technique for GaN growth and is capable of providing high growth rates and thick GaN layers. 13,14 The in situ doping of GaN with Er during HVPE growth should result, therefore, in thick, uniformly doped layers. Low temperature Er 3ϩ luminescence of the in situdoped sample is observed with the peak intensity at 1536.5 nm and an 11 K lifetime of 2.1Ϯ0.1 ms. The Er 3ϩ luminescence was no lon...

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Section: ͓S0003-6951͑98͒02010-5͔supporting

confidence: 82%

Section: ͓S0003-6951͑98͒02010-5͔mentioning

confidence: 99%

Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er

Hansen

Zhang

Perkins

et al. 1998

Applied Physics Letters

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“…10 We have previously shown that single anneals of implanted GaN:Er,O at 800°C ͑45 min͒ or 900°C ͑30 min͒ are comparable. 17 It was also shown in the same article that single anneals are preferable to multiple anneals ͑600-900°C͒ or ''low-temperature'' anneals ͑600-700°C͒ when attempting to maximize the Er 3ϩ -related PL intensity at 1539 nm. In this study the integrated PL from samples that have been annealed at 800°C ͑45 min͒ and 900°C ͑30 min͒, are compared to samples annealed at 800°C ͑45 min͒ or 900°C ͑30 min͒.…”

Section: Annealingmentioning

confidence: 95%

Photo-, cathodo-, and electroluminescence from erbium and oxygen co-implanted GaN

Torvik

Qiu²,

Feuerstein

et al. 1997

Journal of Applied Physics

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Efficient Er-related photo-, cathodo-, and electroluminescence at 1539 nm was detected from Er and O co-implanted n-type GaN on sapphire substrates. Several combinations of Er and O implants and postimplant annealing conditions were studied. The Er doses were in the range (0.01-5)ϫ10 15 ions/cm 2 and O doses (0.1-1)ϫ10 16 ions/cm 2 . GaN films implanted with 2ϫ10 15 Er 2ϩ /cm 2 at 350 keV and co-implanted with 10 16 O ϩ /cm 2 at 80 keV yielded the strongest photoluminescence intensity at 1539 nm. The annealing condition yielding the strongest Er-related photoluminescence intensity was a single anneal at 800°C ͑45 min͒ or at 900°C ͑30 min͒ in flowing NH 3 . The optimum O:Er ratio was found to be between 5:1 and 10:1. Co-implanting the GaN:Er films with F was also found to optically activate the Er, with slightly ͑20%͒ less photoluminescence intensity at 1539 nm compared to equivalent GaN:Er,O films. The Er-related luminescence lifetime at 1539 nm was found to depend on the excitation mechanism. Luminescence lifetimes as long as 2.95Ϯ0.15 ms were measured at 77 K under direct excitation with an InGaAs laser diode at 983 nm. At room temperature the luminescence lifetimes were 2.35Ϯ0.12, 2.15Ϯ0.11, and 1.74Ϯ0.08 ms using below-band-gap excitation, above-band-gap excitation, and impact excitation ͑reverse biased light emitting diode͒, respectively. The cross sections for Er in GaN were estimated to be 4.8ϫ10 Ϫ21 cm 2 for direct optical excitation at 983 nm and 4.8ϫ10 Ϫ16 cm 2 for impact excitation. The cross-section values are believed to be within a factor of 2-4.

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“…This corresponds to an indirect excitation of the Er 3+ ions by electron-hole pairs. A few experiments have been carried out in which the Er 3+ ions have been excited directly by the optical pump radiation [14]. In this case, the Er 3+ ions are excited directly by the optical pump, with the energy of the laser radiation equal to that of one of the higher energy states of the Er 3+ ion.…”

Section: Optical Excitation Spectroscopymentioning

confidence: 99%

Luminescence from Erbium-Doped Gallium Nitride Thin Films

Zavada

Thaik

Hömmerich

et al. 1999

MRS Internet j. nitride semicond. res.

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The III-V nitride semiconductors appear to be excellent host materials for optical device applications involving thin films doped with rare earth atoms. In particular, GaN epilayers doped with Er ions have shown a highly reduced thermal quenching of the Er luminescence intensity from cryogenic to elevated temperatures. The remarkable thermal stability of the light emission may be due to the large energy bandgap of the material, as well as to the optical inactivity of material defects in the GaN film. In this paper we present recent developments concerning the luminescence characteristics of Er-doped GaN thins films. We have used two methods for doping GaN films with Er ions, ion implantation and in-situ incorporation during gas source metalorganic molecular beam epitaxy (MOMBE). Bandedge (at ~ 0.34 µm) and infrared (at ~ 1.54 µm) photoluminescence (PL) spectra have been measured for both types of Er-doped GaN films. Considerably different emission spectra have been observed depending upon the incorporation method and the heat treatment procedure. In situ Er-doped GaN layers have been processed into hybrid light emitting devices and emission spectra at 1.54 µm have been measured. Erbium in Semiconductors and Thermal QuenchingThe optical properties of rare earth ions in insulating materials have been extensively studied for applications in solid state lasers and optical fiber amplifiers [1]. Solid state lasers, such as Nd 3+ :YAG, are based on the 4f intra-subshell transitions of the rare earth trivalent ions (RE 3+ ) which exhibit a very stable lasing wavelength and minimum temperature dependence. Because of these characteristics, such lasers have found widespread applications in laboratory and military systems. Er-doped silica fibers are being used for amplification of optical signals in wavelength division multiplexing (WDM) communication systems operating at 1.54 µm and Pr-doped fibers are being developed for use at 1.3 µm [2].Investigations of the optical properties of rare earth-doped III-V semiconductors have begun relatively recently. Beginning with the work of Ennen et al. in 1983 [3], the luminescence of rare earth ions in III-V compound semiconductors has received considerable attention. The main goal of this work has been to develop electrically pumped optical sources and amplifiers for use in optical communication systems. Studies of rare earth ions in a variety of different semiconductors have been conducted [4,5,6]. Due to the importance of the 1.54 µm region for optical communications, Er has been the main rare earth element to be investigated.https://www.cambridge.org/core/terms. https://doi

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Annealing Study of Erbium and Oxygen Implanted Gallium Nitride

Cited by 23 publications

References 17 publications

Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er

Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er

Photo-, cathodo-, and electroluminescence from erbium and oxygen co-implanted GaN

Luminescence from Erbium-Doped Gallium Nitride Thin Films

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