Annealing study of a bistable defect in proton-implanted n-type 4H-SiC

Nielsen, Henrik Kofoed; Martin, David; Lévêque, P.; Hallén, Anders; Svensson, B. G.

doi:10.1016/j.physb.2003.09.151

Cited by 16 publications

(22 citation statements)

References 14 publications

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“…The bistable M-center with its two configurations A and B is detected. As discussed by Martin et al 8,9 and as can be seen from Fig. 1, the M-center is superimposing the EH1, Z 1=2 , and EH3 peaks.…”

Section: Resultsmentioning

confidence: 61%

“…For four temperatures, the annihilation process of the M-center was simulated using the results for the annihilation energy and the prefactor given in Ref. 9. The obtained EB-centers generation energy is close to the annihilation energy of the M-center, thus these two kinds of centers are likely correlated.…”

mentioning

confidence: 86%

“…Nielsen et al 9 studied the annealing behavior of the M-center. The annihilation process follows first order kinetics according to:…”

Section: B Annealing Of M-center and Generation Of Eb-centersmentioning

confidence: 99%

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Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC

Beyer

Hemmingsson

Pedersen

et al. 2011

Journal of Applied Physics

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After low-energy electron irradiation of epitaxial n-type 4H-SiC with a dose of 5 Â 10 16 cm À2 , the bistable M-center, previously reported in high-energy proton implanted 4H-SiC, is detected in the deep level transient spectroscopy (DLTS) spectrum. The annealing behavior of the M-center is confirmed, and an enhanced recombination process is suggested. The annihilation process is coincidental with the evolvement of the bistable EB-centers in the low temperature range of the DLTS spectrum. The annealing energy of the M-center is similar to the generation energy of the EB-centers, thus partial transformation of the M-center to the EB-centers is suggested. The EB-centers completely disappeared after annealing temperatures higher than 700 C without the formation of new defects in the observed DLTS scanning range. The threshold energy for moving Si atom in SiC is higher than the applied irradiation energy, and the annihilation temperatures are relatively low, therefore the M-center, EH1 and EH3, as well as the EB-centers are attributed to defects related to the C atom in SiC, most probably to carbon interstitials and their complexes.

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Section: Resultsmentioning

confidence: 61%

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confidence: 86%

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Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC

Beyer

Hemmingsson

Pedersen

et al. 2011

Journal of Applied Physics

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“…Following irradiation, circular nickel (Ni) contacts having 1 mm diameter and 150 nm thickness were deposited on the epitaxial-layer surface using an electron-beam evaporator to form SBDs. To alleviate implantation damage and reduce the concentration of metastable peaks appearing in the temperature region relevant for DLTS measurements, 63,64 all samples were annealed at 300°C in air for 30 min using a conventional tube furnace.…”

Section: Sample Preparationmentioning

confidence: 99%

Electrical charge state identification and control for the silicon vacancy in 4H-SiC

et al. 2019

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Reliable single-photon emission is crucial for realizing efficient spin-photon entanglement and scalable quantum information systems. The silicon vacancy (V Si) in 4H-SiC is a promising single-photon emitter exhibiting millisecond spin coherence times, but suffers from low photon counts, and only one charge state retains the desired spin and optical properties. Here, we demonstrate that emission from V Si defect ensembles can be enhanced by an order of magnitude via fabrication of Schottky barrier diodes, and sequentially modulated by almost 50% via application of external bias. Furthermore, we identify charge state transitions of V Si by correlating optical and electrical measurements, and realize selective population of the bright state. Finally, we reveal a pronounced Stark shift of 55 GHz for the V1′ emission line state of V Si at larger electric fields, providing a means to modify the single-photon emission. The approach presented herein paves the way towards obtaining complete control of, and drastically enhanced emission from, V Si defect ensembles in 4H-SiC highly suitable for quantum applications.

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“…These vacant sites inhabited by argon atoms were emptied, which could trap more hydrogen atoms during hydrogen ion irradiation, thus the hydrogen intensity obviously increased in the bombarded layers [2]. Furthermore, the internal stress of C-SiC films could partly release due to initialannealing, which would make the films and the transition layer restructure and become compact [2,9,10]. Hydrogen was jammed and retarded diffusion in the bombarded layers.…”

Section: Resultsmentioning

confidence: 99%