Annealing sequence dependence of directly bonded InP/Si substrate for GaInAsP LDs on silicon platform

Abstract

We demonstrated the bonding of thin film InP and Si using wafer direct bonding technique, described the heating process of the InP-Si directly attached substrate. The evaluation of the prepared InP-Si substrate by observing the surface state with Nomarski-mode images is better than previous annealing sequence. We have successfully obtained lasing characteristics of GaInAsP MQW LD using this substrate.