Annealing Process on Metal–Oxide–Semiconductor Channel Properties for Quasivertical GaN‐on‐Sapphire Trench Metal–Oxide–Semiconductor Field‐Effect Transistor
Jiaan Zhou,
An Yang,
Guohao Yu
et al.
Abstract:Quasi‐vertical GaN trench‐gate MOSFETs with different etch RF power and the impact of the order of annealing process in TMAH wet treatment have been fabricated and studied. The high‐power device has a threshold voltage of 5.3 V and a maximum saturation current density of 552 A/cm2, whereas the low‐power device has a threshold voltage of 4.5 V and a maximum saturation current density of 650 A/cm2. However, the low‐power device has more severe off‐state leakage due to more fixed charges and defects on the device… Show more
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