Annealing of radiation damage in MOS devices: Study by diode parameter determination

Bendada, E.; Rais, Khalid

doi:10.1051/epjap:1999114

Cited by 4 publications

(5 citation statements)

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“…1 that a significant reduction in the amount of charges is obtained with an annealing process even at 100 • C. This is showing that the charges created by the ionizing radiation can be removed by an easy neutralization process that is enhanced by a low-temperature annealing. One of the possible mechanisms might be heat-assisted tunneling of electrons from the substrate into the trapped positive charges in the oxide [24]. We also studied the effect of different annealing ambient and observed no difference between annealing under H 2 and N 2 .…”

Section: Resultsmentioning

confidence: 85%

“…The gate bias during irradiation enhances this range and supply to measure a few microgray as lower limit and 300 Gy as upper limit. It is widely accepted that there are two different contributions to the flat band voltage shift, one is attributed to oxide-trapped charge and the other is interface-trapped charge [24]. An evaluation of the interface state charges is given below.…”

Section: Resultsmentioning

confidence: 99%

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Temperature cycling of MOS-based radiation sensors

Yılmaz

Turan

2008

Sensors and Actuators A: Physical

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Section: Resultsmentioning

confidence: 85%

Section: Resultsmentioning

confidence: 99%

Temperature cycling of MOS-based radiation sensors

Yılmaz

Turan

2008

Sensors and Actuators A: Physical

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“…3 shows a typical C-V behavior of the MOS capacitors before and after the gamma irradiation. It is widely accepted that there are two different contributions to the flat band-voltage shift, one is attributed to oxide-trapped charge and the other is interface trapped-charge [24].…”

Section: Resultsmentioning

confidence: 99%

Ge nanocrystals embedded in SiO2 in MOS based radiation sensors

Aktağ

Yılmaz

Mogaddam

et al. 2010

Nuclear Instruments and Methods in Physics Research Section B:

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a b s t r a c tIn this work, the effects of gamma radiation on the Raman spectra of Ge nanocrystals embedded in SiO 2 have been investigated. SiO 2 films containing nanoparticles of Ge were grown using the r.f.-magnetron sputtering technique. Formation of Ge nanocrystals was observed after high temperature annealing in an inert atmosphere and confirmed by Raman measurements. The intensity of the Raman signal originating from Ge nanocrystals was found to decrease with increasing gamma radiation. The study also includes the gamma radiation effects on MOS structure with Ge nanocrystals embedded in SiO 2 . The gamma radiation effects from 500 up to 4000 Gray were investigated. Capacitance-voltage measurements were performed and analyzed. Oxide traps and interface trap charges were calculated. Results show that MOS structure with Ge nanocrystals embedded in SiO 2 is a good candidate to be used in radiation sensors, especially at high radiation doses.

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“…But, in the case of nMOS transistors, the threshold voltage decreased with absorbed dose up to certain doses (of about 200 Gy [5]), and then increased as a result of rapid increase of negatively charged interface states. Figure 4 shows the calculated threshold voltage change th V ∆ as a function of radiation dose (lines) and experimentally determined values (dots) for n-channel power MOS HEXFETs as reported in [12]. Also, in Above doses of about100 Gy , the density of negatively charged acceptors at the SiO 2 /Si interface is not negligible and this results in a turnaround (or 'rebound') of the th V ∆ .…”

Section: Threshold Voltage Shiftmentioning

confidence: 98%

“…Calculated and experimentally determined threshold voltage shift and contribution of oxide charge and interface traps vs. dose for n-channel power MOS HEXFET. Experimental results are used from[12].…”

mentioning

confidence: 99%

A Model of Gamma-Ray Irradiation Effects in Silicon Dioxide Films and on Silicon Dioxide - Silicon Interface

Odalović

Petković

2007

MSF

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The gamma-ray irradiation causes positive charge traps formation in silicon dioxide films and at silicon dioxide - silicon interface of MOS devices, and the threshold voltage shift in MOS transistors. Here, the Monte Carlo model was used to develop an approach for estimating gammaray induced traps spatially distributed in silicon dioxide films. This is combined with the model of energy distributed traps at silicon dioxide - silicon interface. The developed model enables gammaray induced charge and threshold voltage shift determination as a function of gamma-ray doses. The threshold voltage measurements at a single specified current, both of radiation sensitive and radiation hardened MOS transistors irradiated with different doses of gamma-ray are compared with the developed model and good agreement are obtained.

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Annealing of radiation damage in MOS devices: Study by diode parameter determination

Cited by 4 publications

References 0 publications

Temperature cycling of MOS-based radiation sensors

Temperature cycling of MOS-based radiation sensors

Ge nanocrystals embedded in SiO2 in MOS based radiation sensors

A Model of Gamma-Ray Irradiation Effects in Silicon Dioxide Films and on Silicon Dioxide - Silicon Interface

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