Annealing of lead zirconate titanate (65/35) thin films for ultra large scale integration storage dielectric applications: Phase transformation and electrical characteristics

Investigation of Pt/Ti bilayer metallization on silicon for ferroelectric thin film integration

“…Detailed studies on the stability of Pt/Ti bilayer metallizations in an oxidizing ambient have scarcely been reported. Large variations in the thicknesses of Pt and Ti layers listed in Table I have been attempted [12][13][14][15][16][17][18][19][20][21][22]. Recent studies [13,14,23] on the stability of Pt/Ti bilayers in an oxidizing atmosphere pointed out a potential problem arising due to the oxidation of the intermediate Ti-bonding layer, and its diffusion into the Pt film.…”

Influence of texture on the switching behavior of Pb(Zr0.70Ti0.30)O3 sol-gel derived thin films

“…Such a phenomenon has been previously reported for rhombohedral phase PZT thin films [Pb(Zr 0.65 Ti 0.35 )O 3 ], being explained as "hysteresis relaxation." 8 In bulk ceramics, such constrictions of the hysteresis loops and a concurrent reduction of the dielectric loss factor, tan d, occur with aging due to a gradual stabilization of the domain structure. 28 The The mechanisms involve one or more of the following phenomenon: stabilization of the existing spontaneous polarization direction due to anisotropic lattice defects, pinning of domain walls by diffusing lattice defects, creation of internal electric field due to discontinuities in the spontaneous polarization within the material, and stress effects.…”

“…[3][4][5][6] Softer hysteresis with lower P r and coercive field ͑E c ͒ occurs for rhombohedral compositions ͑x , 0.47͒. [2][3][4][6][7][8] Rhombohedral compositions thus have the advantage of lower switching fields. 3 In the preparation of PZT thin films by various deposition techniques, it has been reported that the ease of nucleation of the perovskite structure improves with Ti addition.…”

“…9,10 Similar microstructural features have also been observed for rhombohedral Pb(Zr 0.65 Ti 0.35 )O 3 prepared by reactive dc-magnetron sputtering and crystallization ex situ. 8 In sol-gel deposition where ex situ crystallization is required, these two factors strongly influence the PZT microstructure due to the need for efficient nucleation of the perovskite phase (high nuclei density) and the amorphous to pyrochlore to perovskite crystallization sequence. [11][12][13][14] Several recent papers discuss the effects of microstructure and texture ("epitaxy") on the switching and fatigue properties of PZT thin films.…”