Annealing of AsGa-related defects in LT-GaAs: The role of gallium vacancies

Bliss, D. E.; Walukiewicz, W.; Häller, E. E.

doi:10.1007/bf02649985

Cited by 38 publications

(22 citation statements)

References 11 publications

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“…This mechanism of Bi clustering is also supported by the fact that V Ga assists the diffusion of As Ga to form As-rich clusters during the thermal annealing of low temperaturegrown GaAs. 48,49 Because of the strong binding between V Ga and Bi Ga as well as the relatively fast V Ga -mediated Bi Ga diffusion, we anticipate that the initial Bi-rich clusters consist of both Bi and V Ga and that minimizing the content of V Ga is expected to effectively reduce the formation of Bi-rich clusters under thermal annealing.…”

Section: Influences Of Defect Energy Levels On Minority-carriersmentioning

confidence: 99%

Understanding and reducing deleterious defects in the metastable alloy GaAsBi

et al. 2017

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Technological applications of novel metastable materials are frequently inhibited by abundant defects residing in these materials. Using first-principles methods, we investigate the defect thermodynamics and phase segregation in the technologically important metastable alloy GaAsBi. Our calculations predict defect energy levels in good agreement with those from numerous previous experiments and clarify the defect structures giving rise to these levels. We find that vacancies in some charge states become metastable or unstable with respect to antisite formation, and this instability is a general characteristic of zincblende semiconductors with small ionicity. The dominant point defects that degrade the electronic and optical performances are predicted to be As Ga , Bi Ga , As Ga +Bi As , Bi Ga +Bi As , V Ga and V Ga +Bi As , of which the first four and last two defects are minority-electron and minority-hole traps, respectively. V Ga is also observed to have a critical role in controlling metastable Bi supersaturation by mediating Bi diffusion and clustering. To reduce the influences of these deleterious defects, we suggest shifting the growth away from an As-rich condition and/or using hydrogen passivation to reduce the minority-carrier traps. We expect this work to aid in the applications of GaAsBi for novel electronic and optoelectronic devices and to illuminate the control of deleterious defects in other metastable materials.

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Section: Influences Of Defect Energy Levels On Minority-carriersmentioning

confidence: 99%

Understanding and reducing deleterious defects in the metastable alloy GaAsBi

et al. 2017

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“…Annealing then provides the thermal activation energy, which allows individual defects to migrate through the material to form metallic precipitates. At any given annealing temperature, these defect concentrations will approach an equilibrium value as the duration of the anneal increases, according to the vacancy assisted diffusion mechanism applied by Bliss et al [37]. The position of this equilibrium is a sensitive function of the anneal temperature: for temperatures in excess of 550 C Fig.…”

Section: Materials and Device Fabricationmentioning

confidence: 97%

Optimization of photomixers and antennas for continuous-wave terahertz emission

Gregory

Baker

Tribe

et al. 2005

IEEE J. Quantum Electron.

190

105

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“…16,17 The diffusion of excess arsenic during the annealing process occurs via Gallium vacancies (V Ga ), which are incorporated during low-temperature growth. 11,[18][19][20] Equally to the As Ga defect, the concentration of V Ga increases for lower growth temperatures and reaches values of up to 1 × 10 18 cm -3 . 19 The ultrashort carrier lifetime of LTG-GaAs is due to carrier trapping by ionized As Ga defects (As Ga + ).…”

Section: Low Temperature Growthmentioning

confidence: 99%

Terahertz detectors from Be-doped low-temperature grown InGaAs/InAlAs: Interplay of annealing and terahertz performance

et al. 2016

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The influence of post-growth annealing on the electrical properties, the transient carrier dynamics and the performance as THz photoconductive receiver of Beryllium (Be) doped InGaAs/InAlAs multilayer heterostructures grown at 130 °C in a molecular beam epitaxy (MBE) system was investigated. We studied samples with nominally Be doping concentrations of 8 ×10 17 cm-3 – 1.2 ×1019 cm3 annealed for 15 min. – 120 min. at temperatures between 500 °C – 600 °C. In contrast to previous publications, the results show consistently that annealing increases the electron lifetime of the material. In analogy to the annealing properties of low-temperature grown (LTG) GaAs we explain our findings by the precipitation of arsenic antisite defects. The knowledge of the influence of annealing on the material properties allowed for the fabrication of broadband THz photoconductive receivers with an electron lifetime below 300 fs and varying electrical properties. We found that the noise of the detected THz pulse trace in time-domain spectroscopy (TDS) was directly determined by the resistance of the photoconductive receiver and the peak-to-peak amplitude of the THz pulse correlated with the electron mobility.

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Annealing of AsGa-related defects in LT-GaAs: The role of gallium vacancies

Cited by 38 publications

References 11 publications

Understanding and reducing deleterious defects in the metastable alloy GaAsBi

Understanding and reducing deleterious defects in the metastable alloy GaAsBi

Optimization of photomixers and antennas for continuous-wave terahertz emission

Terahertz detectors from Be-doped low-temperature grown InGaAs/InAlAs: Interplay of annealing and terahertz performance

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