Annealing Kinetic Model Using Fast and Slow Metastable Defects for Hydrogenated-Amorphous-Silicon-Based Solar Cells

Abstract

The two-component kinetic model employing "fast" and "slow" metastable defects for the annealing behaviors in pin-type hydrogenated-amorphous-silicon-(a-Si:H-) based solar cells is simulated using a normalized fill factor. Reported annealing data on pin-type a-Si:H-based solar cells are revisited and fitted using the model to confirm its validity. It is verified that the twocomponent model is suitable for fitting the various experimental phenomena. In addition, the activation energy for annealing of the solar cells depends on the definition of the recovery time. From the thermally activated and high electric field annealing behaviors, the plausible microscopic mechanism on the defect removal process is discussed.

Early thermal aging detection in tin based perovskite solar cell

“…Under stress conditions, excess charge carriers, n , and p , generate, which cause the formation and increase of defects in the PSC [33] . Since the defect increment affects the behavior and performance of the device, the degradation rate of the device parameters can be modeled by monitoring the defect concentration [33] , [34] , [35] . The kinetics of the excess carrier and excess defect creations are related as follows [36] , [37] , [38] : where α and β are the defect creation and annihilation rates related to the material parameters, and their values are assigned according to the defect type.…”