Annealing‐Free Ohmic Contacts to n‐Type GaN via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Sub‐Nanometer AlOx
Maximilian Christis,
Alex Henning,
Johannes D. Bartl
et al.
Abstract:A plasma‐assisted atomic layer deposition (PE‐ALD) process is reported for creating ohmic contacts to n‐type GaN that combines native oxide reduction, near‐surface doping, and encapsulation of GaN in a single processing step, thereby eliminating the need for both wet chemical etching of the native oxide before metallization and thermal annealing after contact formation. Repeated ALD cycling of trimethyl aluminum (TMA) and high‐intensity hydrogen (H2) plasma results in the deposition of a sub‐nanometer‐thin (≈8… Show more
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