2006
DOI: 10.1109/tps.2006.878433
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Annealing Effects on Silicon Oxynitride Layer Synthesized by N Plasma Immersion Ion Implantation

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Cited by 2 publications
(4 citation statements)
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“…So far no rational mechanism could be elucidated. 25,27,40,41 However, in survey XPS spectra of the M-dots (Fig. S2, ESI †) no signal was observed at ca.…”
Section: Resultsmentioning
confidence: 99%
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“…So far no rational mechanism could be elucidated. 25,27,40,41 However, in survey XPS spectra of the M-dots (Fig. S2, ESI †) no signal was observed at ca.…”
Section: Resultsmentioning
confidence: 99%
“…2D, red line). 41 The Si-N surface chemical bond was further studied by XPS. XPS survey spectra of unfunctionalized SiO 2 nanoparticles show signals with binding energies of 103.3, 151 and 532 eV that were attributed to Si-O 2 (2p), Si-O 2 (2s) and O (1s) respectively ( Fig.…”
Section: Resultsmentioning
confidence: 99%
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“…Improvement in component lifetime is necessary to realize this system. Much work has focused on improvement of components made from stainless steel [92,93], steel [94], titanium and aluminum alloy (Ti-6Al-4V) [94] and silicon wafer [95]. The kinetic energy of the ions is only needed to penetrate the surface layer of contamination or similar barrier, while the actual nitriding step is dominated by diffusion [94].…”
Section: Plasma-based Ion Implantation and Depositionmentioning
confidence: 99%