Annealing effects on electrical and optical properties of a-Si:H layer deposited by PECVD

Elghoul, N.; Kraı̈em, S.; Jemaï, R.; Zebentout, Baya; Khirouni, K.

doi:10.1016/j.mssp.2015.06.033

Cited by 10 publications

(1 citation statement)

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“…Schottky diodes also play important roles in electronic devices such as infrared detectors operating at very low temperatures, sensors in thermal imaging, microwave diodes, infrared and nuclear particle detectors [26]. Moreover, metalgraphene contact is a very active subject and to understand the physical mechanisms behind it, the analysis of the I-V characteristics of Schottky diodes only at room temperatures does not provide sufficient information about the nature of the barrier formation or their transport mechanism.…”

Section: Resultsmentioning

confidence: 99%

Fabrication and characterization of Au/n-type InP Schottky barrier diode with monolayer graphene interlayer

Çatır¹

2020

Semicond. Sci. Technol.

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Au/graphene/n-InP Schottky barrier diode (SBD) was fabricated by the use of spray pyrolysis technique with a monolayer graphene interlayer, and the temperature dependent characteristics was performed in a wide temperature range from 60 to 300 K with steps. The Au/GR/n-InP SBD exhibited excellent rectifying behavior however barrier height (Φ b0 ) of the device increased with increasing temperature while ideality factor (n) and series resistance (R s ) decreased. The strong temperature dependency of SBH and the deviation from theoretical value of Richardson constant clarified by considering a Gaussian distribution model of the SBH which was caused by the BH inhomogeneities. The mean BH F b0 of 0.94 and 0.59 eV was estimated with the standard deviation of 0.011 and 0.004 eV attributed to the presence of a double GD of SBD. The modified Richardson plots gave mean BH value of 0.98 and 0.70 eV and the Richardson constant values of 8.10, 13,38 A K −2 cm −2 was very close to its theoretical value of 9.4 A K −2 cm −2 . These results yields that carrier transport mechanism of Au/GR/n-InP SBD can be clarified by Thermionic-emission-diffusion (TED) mechanism with a double Gaussian distribution of the SBHs. In addition, the I-V characteristics of SBD under dark and light ambiance indicates that Au/graphene/n-InP is strongly dependent on the light effect. Thus, we can conclude that graphene/n-InP device is a potential candidate for photovoltaic systems. Moreover, the UV-vis spectroscopy of the graphene film exhibit a strong absorption as A=9.45% compared to the literature, that is, Au/GR/n-InP SBD grown by spray pyrolysis has excellent optical properties for optoelectronic applications.

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Section: Resultsmentioning

confidence: 99%