Annealing effect on UV-illuminated recovery in gas response of graphene-based NO₂ sensors

Abstract

The response and recovery of a graphene-based sensor for nitrogen dioxide (NO2) sensing is improved by a combination of two treatments including rapid thermal annealing (RTA) of graphene and UV illumination during the pump down period.

Tuning the electronic, magnetic, and sensing properties of a single atom embedded microporous C3N6 monolayer towards XO2 (X = C, N, S) gases

“…But, t may be further decreased with the different methods, like wet scrubbing, increase in temperature, using a femtosecond laser, terahertz pulses, and ultraviolet illumination. [51][52][53][54][55] Though it is seen that a high E ads can hinder the reusability of the TM-C 3 N 6 based gas sensor device, this system can be used as a good adsorbent or a disposable device for the gases concerned at room temperature.…”

Room-Temperature Gas Sensors Under Photoactivation: From Metal Oxides to 2D Materials

“…Moreover, the sensitivity was enhanced to acetone by seven times under UV illumination at RT with response/recovery time of 300 s through desorption of natural atmospheric oxygen and water molecules from the surface of the graphene. The same group also improved the response/recovery kinetics of the graphene sensor to NO 2 gas at RT by using rapid thermal annealing (RTA) and UV light irradiation [ 91 ]. The as-fabricated sensor device using transferred CVD grown graphene was treated via RTA at 300 °C in N 2 environment for providing more adsorption surface area through removing the polymer residue of transfer process.…”

Vertically aligned carbon nanotubes, MoS2–rGo based optoelectronic hybrids for NO2 gas sensing

“…Despite the introduction of many new 2d materials, graphene as the first material discovered, is still used in many ongoing sensing studies thanks to its high electrical conductivity, large detection surface area, and high sensitivity potentials 7,8 . However, the desorption of the adsorbed molecules onto the surface of the graphene in the sensor channel does not occur easily resulting in a loss of sensitivity, poor response, and incomplete recovery of the sensor at room temperature 9 . Although, increasing the operating temperature up to 200 °C is associated with an improvement of the sensor performance, higher energy consumption and safety concerns limit their practical usages 7 .…”

“…Although, increasing the operating temperature up to 200 °C is associated with an improvement of the sensor performance, higher energy consumption and safety concerns limit their practical usages 7 . As an alternative suggestion, the required energy can be provided by light irradiation 8,9 . In fact, in situ exposure to light during gas detection process results in the photo-generated carriers within the channel of the optical-sensitive device.…”