2015
DOI: 10.1063/1.4916515
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Annealing effect on donor-acceptor interface and its impact on the performance of organic photovoltaic devices based on PSiF-DBT copolymer and C60

Abstract: In this work, poly[2,7-(9,9-bis(2-ethylhexyl)-dibenzosilole)-alt-4,7-bis(thiophen-2-yl)benzo-2,1,3-thiadiazole] (PSiF-DBT) was used as active layer in bilayer solar cell with C60 as electron acceptor. As cast devices already show reasonable power conversion efficiency (PCE) that increases to 4% upon annealing at 100 °C. Space charge limited measurements of the hole mobility (μ) in PSiF-DBT give μ ∼ 1.0 × 10−4 cm2/(V s) which does not depend on the temperature of the annealing treatment. Moreover, positron anni… Show more

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Cited by 13 publications
(9 citation statements)
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“…Another key-point to understand the photovoltaic properties of our devices is that the PSiF-DBT is able to form very packed thin films even without any thermal annealing treatment. Using the Positron Annihilation Spectroscopy (PAS) technique, [51] we showed recently that the material packing does not change even when the PSIF-DBT films are submitted to annealing at temperatures up to 200°C. As a consequence, the thermal annealing is able to induce only a modest rise of the effective hole mobility in the PSIF-DBT film.…”
Section: The Psif-dbt Layermentioning
confidence: 99%
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“…Another key-point to understand the photovoltaic properties of our devices is that the PSiF-DBT is able to form very packed thin films even without any thermal annealing treatment. Using the Positron Annihilation Spectroscopy (PAS) technique, [51] we showed recently that the material packing does not change even when the PSIF-DBT films are submitted to annealing at temperatures up to 200°C. As a consequence, the thermal annealing is able to induce only a modest rise of the effective hole mobility in the PSIF-DBT film.…”
Section: The Psif-dbt Layermentioning
confidence: 99%
“…However, an improvement in J SC of photovoltaic devices (and consequently in PCE) was achieved when the PSiF-DBT layer was submitted to the annealing process prior to the acceptor deposition. This effect was attributed to the roughness increase of the polymeric surface which (i) provides an enhanced donor/ acceptor contact area and (ii) assists the fullerene diffusion creating an mixed layer close to the so called bulk heterojunction [51] . The surface roughness enhancement after annealing will be revisited here to discuss the effects originated from different diffusivities of the C 60 and C 70 into the polymeric layer.…”
Section: The Psif-dbt Layermentioning
confidence: 99%
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“…As reported, the efficiency of a bilayer device can be enhanced through a change in the electrondonor/acceptor interface. 30,41 To investigate this phenomenon, film topography was characterized by AFM measurement (Figure 3c). It is possible to verify that the root-mean-square of the mixture is higher than that of pristine material.…”
Section: ■ Experimental Sectionmentioning
confidence: 99%
“…Como é de interesse aumentar a interface entre o polímero doador e aceitador da blenda a fim de ter uma maior geração de portadores, a pesquisa por misturas com essas características são grandes. A Figura 3.9 mostra alguns diferentes tipos de interface entre o polímero aceitador e doador na mistura.Os dispositivos bulk-heterojunção mais estudados e frequentemente reportados na literatura são os que consistem da blenda de um polímero doador de elétrons e um fulereno como aceitador[4, 28,34,35,[37][38][39]. O material mais comumente usado como aceitador e com vários artigos publicados é o[6,6]-fenil-C61-ácido butírico-metil éster (PCBM), que Foi utilizado um cantilever comercial de silício dopado com antimônio.…”
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