Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors

Fu, Ruofan; Yang, Jianwen; Zhang, Qun; Chang, Wen-Chieh; Chang, Chia-Chun; Liu, Po-Tsun; Shieh, Han–Ping D.

doi:10.1109/edtm.2018.8421476

Cited by 2 publications

(2 citation statements)

References 11 publications

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“…Compared to earlier works, the composition of the materials became more complex, and mainly ternary oxides were reported on. 37–63 The extreme super high mobilities reported in previous studies, i.e. above 100 cm 2 V −1 s −1 , were however not seen anymore, except for some outliers.…”

Section: Introductionmentioning

confidence: 61%

Complex amorphous oxides: property prediction from high throughput DFT and AI for new material search

et al. 2022

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Section: Introductionmentioning

confidence: 61%

Complex amorphous oxides: property prediction from high throughput DFT and AI for new material search

et al. 2022

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“…Different annealing conditions, especially the annealing atmosphere, have a significant effect on the performance of OS TFTs. However, most studies on the effects of annealing conditions have focused on IGZO [31], indium-gallium-tin oxide (IGTO) [29], indium-zinctin oxide (IZTO) [32], indium-gallium oxide [33], and other In-based multi-cation composition OSs [34,35]. Few studies have been conducted on the effect of the annealing atmosphere on the performance of In 2 O 3 TFTs.…”

Section: Introductionmentioning

confidence: 99%

The influence of annealing atmosphere on sputtered indium oxide thin-film transistors

Xiao

Yuvaraja

Chettri

et al. 2023

J. Phys. D: Appl. Phys.

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Indium oxide (In2O3) thin films sputtered at room temperature were annealed under different atmospheres and examined for thin-film transistor (TFT) active channel applications. The annealing process was performed in a rapid thermal annealing system at 350 °C under O2, Ar, forming gas (FG, 96% N2/4% H2), and N2. It was found that the annealed In2O3 TFTs exhibited high field-effect mobility (μFE >40 cm2V−1s−1), high on/off current ratio (Ion/off ~108), and controlled threshold voltage (VTH) for the enhancement- and depletion-mode operations. Note that the annealing atmosphere has a significant effect on the electrical performance of the In2O3 TFTs by inducing changes in oxygen-related species, particularly oxygen vacancies (VO) and hydroxyl/carbonate species (O–H/C–O). For the O2-, Ar-, FG-, and N2-annealed TFTs, μFE was in increasing order accompanied by a negative shift in VTH, which is a result attributed to the larger VO in the In2O3 thin films. Furthermore, the ΔVTH of the FG-, and N2-annealed TFTs in a positive bias stress (PBS) test was greater than that of the O2-, Ar-annealed devices, attributing to their lower density of O–H/C–O groups in the In2O3 thin films. Our results suggest that the annealing atmosphere contributes to the internal modifications of the In2O3structure and in turn altered the electrical characteristics of TFTs. These annealed In2O3 TFTs with high performance are promising candidates for realizing large-area, transparent, and high-resolution displays.

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Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors

Cited by 2 publications

References 11 publications

Complex amorphous oxides: property prediction from high throughput DFT and AI for new material search

Complex amorphous oxides: property prediction from high throughput DFT and AI for new material search

The influence of annealing atmosphere on sputtered indium oxide thin-film transistors

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