Annealing effect in DC and RF sputtered ITO thin films

Kerkache, L.; Layadi, A.; Dogheche, El Hadj; Rémiens, Denis

doi:10.1051/epjap:2007113

Cited by 16 publications

(16 citation statements)

References 18 publications

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“…These interesting properties make ITO a material of choice for extensive technological applications, especially in solar cells [1][2][3], flat panels [4], gas sensor [5], light-emitting diodes [6] and conductive electrode [7]. Various techniques are used to prepare the ITO films such as radio frequency (RF) sputtering [8,9], DC sputtering [10], RF/DC magnetron sputtering [11,12], RF reactive sputtering [13], e-beam evaporation [14], pulsed laser deposition (PLD) [15], spray pyrolysis [16], ion beam sputter deposition [17] and sol-gel [18]. The choice of the technique and the preparation conditions are the critical points of a research topic since the structural, optical and electrical properties of these films are strongly associated with the elaboration process and operating conditions [19].…”

Section: Introductionmentioning

confidence: 99%

Surface morphology, structural and electrical properties of RF-sputtered ITO thin films on Si substrates

et al. 2018

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Series of indium tin oxide (ITO) thin films were deposited onto Si(100) substrate by RF sputtering. The film thickness ranges from 61 to 768 nm. X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) experiments were performed to study the structure and the surface morphology of these films. The electrical properties were obtained by a Hall effect measurement system; the electrical resistivity ρ, the carrier concentration n and the mobility μ were measured. Annealing experiments were carried out in the air at 400 • C for 60 min. The different physical parameters were investigated as a function of thickness before and after annealing. The effects of power and deposition rate were also addressed. We noted that the behaviour of some parameters with thickness is different before and after annealing. All these results are discussed and correlated in this article. Also, the results of the present ITO/Si system were compared to those of the ITO/glass, we have previously published.

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Section: Introductionmentioning

confidence: 99%

Surface morphology, structural and electrical properties of RF-sputtered ITO thin films on Si substrates

et al. 2018

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Section: Introductionmentioning

confidence: 99%

Hybrid silver nanoparticle and transparent conductive oxide structure for silicon solar cell applications

Huang

Hameiri

Gong³

et al. 2014

Physica Rapid Research Ltrs

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Transparent conductive oxides (TCOs) have been widely used as electrodes for various solar cell structures. For heterojunction silicon wafer solar cells, the front TCO layer not only serves as a top electrode (by enhancing the lateral conductance of the underlying amorphous silicon film), but also as an antireflection coating. These requirements make it difficult to simultaneously achieve excellent conductance and transparency, and thus, only high‐quality indium tin oxide (ITO) has as yet found its way into industrial heterojunction silicon wafer solar cells. In this Letter, we present a cost‐effective hybrid structure consisting of a TCO layer and a silver nano‐particle mesh. This structure enables the separate optimization of the electrical and optical requirements. The silver nanoparticle mesh provides high electrical conductance, while the TCO material is optimized as an antireflection coating. Therefore, this structure allows the use of cost‐effective (and less conductive) TCO materials, such as aluminium‐doped zinc oxide. The performance of the hybrid structure is demonstrated to achieve a similar visible transmission (∼86% in the 380–780 nm range) as an 80 nm thick ITO layer, but with 10 times better lateral conductance. The presented hybrid structure thus seems well suited for a variety of photovoltaic devices. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Indium tin oxide (ITO) is the most commonly used TCO material for HET solar cells, due to its excellent electrical and optical properties. Current deposition techniques are able to form ITO films with resistivities in the range of 10 -5 to 10 -4 Ωcm while maintaining the optical transmissions in the range of 80-90 % [1][2][3][4][5][6]. Due to the high cost of ITO, there is increasing interest in more cost-effective materials such as aluminum-doped zinc oxide (AZO) and gallium-doped zinc oxide (GZO).…”

Section: Introductionmentioning

confidence: 99%

Novel Hybrid Electrode Using Transparent Conductive Oxide and Silver Nanoparticle Mesh for Silicon Solar Cell Applications

Huang

Hameiri

Gong³

et al. 2014

Energy Procedia

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Annealing effect in DC and RF sputtered ITO thin films

Cited by 16 publications

References 18 publications

Surface morphology, structural and electrical properties of RF-sputtered ITO thin films on Si substrates

Surface morphology, structural and electrical properties of RF-sputtered ITO thin films on Si substrates

Hybrid silver nanoparticle and transparent conductive oxide structure for silicon solar cell applications

Novel Hybrid Electrode Using Transparent Conductive Oxide and Silver Nanoparticle Mesh for Silicon Solar Cell Applications

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