Abstract:Tungsten silicide (WSi x ) films, deposited by chemical vapour deposition are normally amorphous in nature, and need to be annealed at high temperature to obtain low resistivity required for interconnections and metallization layers in VLSI circuits. In this paper, we focus on this annealing process for films deposited on Si and SiO 2 substrate, and having Si/W ratio of 2.4. The characterization methods used were time-resolved X-ray diffraction, Resistivity measurement, and Rutherford backscattering spectrosco… Show more
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