Annealing behavior of MeV implanted carbon in silicon

Isomae, Seiichi; Ishiba, Tsutomu; Ando, Toshio; Tamura, M.

doi:10.1063/1.354474

Cited by 27 publications

(8 citation statements)

References 19 publications

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“…Recently, it has been reported that C coimplantation can be used to reduce TED of B. 41,42 This reduction has been attributed [43][44][45] to the fact that the implanted C provides a sink for excess interstitials during annealing. The efficacy of C coimplantation in suppressing TED is limited by the fact that the C needs to getter its own interstitial damage in addition to the interstitials from the dopant implant.…”

Section: Introductionmentioning

confidence: 98%

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Stolk¹,

Gossmann²,

Eaglesham³

et al. 1997

Journal of Applied Physics

595

210

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Copper centers in copper-diffused n-type silicon measured by photoluminescence and deep-level transient spectroscopy Appl. Phys. Lett. 101, 042113 (2012) Bonding and diffusion of nitrogen in the InSbN alloys fabricated by two-step ion implantation Appl. Phys. Lett. 101, 021905 (2012) Shift of Ag diffusion profiles in CdTe by metal/semiconductor interfaces Appl. Phys. Lett. 100, 171915 (2012) Diffusion of co-implanted carbon and boron in silicon and its effect on excess self-interstitials Implanted B and P dopants in Si exhibit transient enhanced diffusion ͑TED͒ during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of implantation damage were combined with B diffusion experiments using doping marker structures grown by molecular-beam epitaxy ͑MBE͒. Damage from nonamorphizing Si implants at doses ranging from 5ϫ10 12 to 1ϫ10 14 /cm 2 evolves into a distribution of ͕311͖ interstitial agglomerates during the initial annealing stages at 670-815°C. The excess interstitial concentration contained in these defects roughly equals the implanted ion dose, an observation that is corroborated by atomistic Monte Carlo simulations of implantation and annealing processes. The injection of interstitials from the damage region involves the dissolution of ͕311͖ defects during Ostwald ripening with an activation energy of 3.8Ϯ0.2 eV. The excess interstitials drive substitutional B into electrically inactive, metastable clusters of presumably two or three B atoms at concentrations below the solid solubility, thus explaining the generally observed immobile B peak during TED of ion-implanted B. Injected interstitials undergo retarded diffusion in the MBE-grown Si with an effective migration energy of ϳ3.5 eV, which arises from trapping at substitutional C. The concept of trap-limited diffusion provides a stepping stone for understanding the enormous disparity among published values for the interstitial diffusivity in Si. The population of excess interstitials is strongly reduced by incorporating substitutional C in Si to levels of ϳ10 19 /cm 3 prior to ion implantation. This provides a promising method for suppressing TED, thus enabling shallow junction formation in future Si devices through dopant implantation. The present insights have been implemented into a process simulator, allowing for a significant improvement of the predictive modeling of TED.

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Section: Introductionmentioning

confidence: 98%

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Stolk¹,

Gossmann²,

Eaglesham³

et al. 1997

Journal of Applied Physics

595

210

View full text Add to dashboard Cite

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“…Moreover, the nature of these complexes is not known yet. Isomae et al suggested that they could be SiC precipitates; 17 from volume considerations it is expected that Si and C coprecipitation occurs with the ratio 1:1, 18 but, if this can explain the absence of dislocations in C-implanted silicon ͑the number of displaced silicon atoms which forms dislocation loops is roughly equal to the implanted dose 19 ͒, it does not clarify how C can also trap the extra silicon interstitials produced by ion implantation of other elements such as B or P.…”

Section: Introductionmentioning

confidence: 99%

Dislocation formation and B transient diffusion in C coimplanted Si

Cacciato

Klappe

Cowern

et al. 1996

Journal of Applied Physics

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Diffusion of boron in 6H and 4H SiC coimplanted with boron and nitrogen ionsSuppression of dislocation formation and boron transient diffusion by carbon coimplantation is studied by means of transmission electron microscopy, secondary-ion-mass spectrometry, photoluminescence spectroscopy, and high-resolution x-ray diffraction. It is shown that both the effects are due to the formation of C-related damage which acts as a trap for Si interstitials. Quantitative simulations indicate that this damage is probably formed by coprecipitation of Si and C atoms in Si 1.15 C complexes. These complexes also deteriorate the electrical properties of the implanted layer. They dissolve at annealing temperatures higher than 900°C. When this occurs, the effect of C is reduced and both B transient diffusion and dislocations, as well as the recovery of the electrical properties, are observed.

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“…Fig. 5(a) and (b) show proximity gettering by implanting oxygen or carbon ions [35] before and after epitaxial growth. Another option for gettering sinks is the use of interfacial misfit dislocations as shown in Fig.…”

Section: A Optimizing Gettering Capability Of Nc Epi In Ulsi Processmentioning

confidence: 96%

A new concept of p/sup -/(n/sup -/)/p/sup -/(n/sup -/) thin-film epitaxial silicon wafers for MOS ULSI's that ensures excellent gate oxide integrity

Shimizu

Sugino

Suzuki

et al. 1998

IEEE Trans. Semicond. Manufact.

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A new concept of epitaxial silicon (Si) wafers (NC epi.) in which p 0 (n 0 ) thin-film layers are grown on p 0 (n 0 ) Czochralski (CZ)-Si substrates (substrate resistivity: approximately 10 cm) is proposed for metal oxide semiconductor (MOS) ultra large-scale integrated circuits (ULSI's) as a starting material. A thickness of 0.3-1 m for the epitaxial layer (p 0 /p 0 structure) is shown to be sufficient for improving the gate oxide integrity for MOS-ULSI's. The epitaxial layer grown on Si substrate greatly reduces weak spots in the gate oxide layer by covering microdefects in the CZ-Si represented by crystal originated particle (COP). The p 0 /p 0 thin-film epitaxial structure results in very controlled resistivity for the electrically active region in the device, which in turn results in a lower growth cost and higher feasibility for use in current ULSI's. The features of NC epi. in combination with proximity gettering ispresented. An application of NC epi. in shallow-trench isolation processes discussed considering retrograde-type well-tub. The amenability of epitaxial wafers to wafer enlargement (over 300 mm) is discussed to eliminate bad effects of COP.

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Annealing behavior of MeV implanted carbon in silicon

Cited by 27 publications

References 19 publications

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Dislocation formation and B transient diffusion in C coimplanted Si

A new concept of p/sup -/(n/sup -/)/p/sup -/(n/sup -/) thin-film epitaxial silicon wafers for MOS ULSI's that ensures excellent gate oxide integrity

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