1999
DOI: 10.1063/1.124711
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Annealing behavior of p-type Ga0.892In0.108NxAs1−x (0⩽X⩽0.024) grown by gas-source molecular beam epitaxy

Abstract: P-type, Be-doped GaInNAs layers (1100 Å thick) are grown on GaAs substrates by gas-source molecular beam epitaxy with a nitrogen radical beam source. High-resolution x-ray rocking curves show that the Ga0.892In0.108NxAs1−x peak shifts closer to the GaAs substrate peak with increasing N concentration, indicating reduced strain. After rapid thermal annealing (RTA) at 700 °C for 10 s, the Ga0.892In0.108As sample suffers strain relaxation, but the N-containing samples remain pseudomorphically strained, suggesting … Show more

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Cited by 77 publications
(41 citation statements)
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“…The annealing affects the PL in two ways. One is a strong enhancement of the radiative efficiency, which is commonly observed in annealing studies [5][6][7][8][9][10][11][12][13][14][15][16]. The other is a red shift of the InGaAsN peak position from 923 nm at 370 1C to 948 nm at 530 1C.…”
Section: Resultsmentioning
confidence: 93%
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“…The annealing affects the PL in two ways. One is a strong enhancement of the radiative efficiency, which is commonly observed in annealing studies [5][6][7][8][9][10][11][12][13][14][15][16]. The other is a red shift of the InGaAsN peak position from 923 nm at 370 1C to 948 nm at 530 1C.…”
Section: Resultsmentioning
confidence: 93%
“…In addition, the heat treatment commonly causes a blue shift in wavelength. This blue shift has been attributed to the interdiffusion of gallium and indium at the InGaAsN/GaAs interface [9][10][11][12], to the redistribution of nitrogen on the group V sub-lattice [5,[12][13][14], or to nitrogen out-diffusion [12]. On the other hand, a red shift in the PL emission wavelength after annealing has been observed in only a few cases.…”
Section: Introductionmentioning
confidence: 93%
“…GaAsN alloy-based dilute nitrides, including InGaAsN, GaSbAsN and GaAsPN, have received much attention for novel optoelectronic devices such as long-wavelength laser diodes on GaAs [1,2], tandem solar cells with high conversion efficiency [3,4], heterojunction bipolar transistors (HBTs) with low turn-on voltage [5,6] and monolithic optoelectronic integrated circuits on Si [7,8]. In order to fabricate these optoelectronic devices, impurity doping, especially p-type, is an important issue.…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, growth processes utilized for fabrication of dilute nitrides, such as gas-source molecular beam epitaxy (GS-MBE) or metalorganic chemical-vapor deposition (MOCVD), usually involve hydrogen. 21,22 Since H is a common contaminant in dilute nitrides and may affect defect formation, 23 a better understanding and control of the grown-in defects and of their interaction with hydrogen in dilute nitrides is highly desirable. Most recently, we have addressed 24 this issue by investigating the effects that low energy sub-threshold H-treatment has on defect properties of GaNP alloys with a relatively low N content of 0.6%-0.8%.…”
Section: Introductionmentioning
confidence: 99%