“…GaAsN alloy-based dilute nitrides, including InGaAsN, GaSbAsN and GaAsPN, have received much attention for novel optoelectronic devices such as long-wavelength laser diodes on GaAs [1,2], tandem solar cells with high conversion efficiency [3,4], heterojunction bipolar transistors (HBTs) with low turn-on voltage [5,6] and monolithic optoelectronic integrated circuits on Si [7,8]. In order to fabricate these optoelectronic devices, impurity doping, especially p-type, is an important issue.…”