Annealing behavior of p-type Ga0.892In0.108NxAs1−x (0⩽X⩽0.024) grown by gas-source molecular beam epitaxy

Abstract

P-type, Be-doped GaInNAs layers (1100 Å thick) are grown on GaAs substrates by gas-source molecular beam epitaxy with a nitrogen radical beam source. High-resolution x-ray rocking curves show that the Ga0.892In0.108NxAs1−x peak shifts closer to the GaAs substrate peak with increasing N concentration, indicating reduced strain. After rapid thermal annealing (RTA) at 700 °C for 10 s, the Ga0.892In0.108As sample suffers strain relaxation, but the N-containing samples remain pseudomorphically strained, suggesting better thermal stability of GaInNAs. The wavelength of room-temperature photoluminescence redshifts from 0.988 to 1.276 μm, due to large band gap bowing, with N concentration increased from 0 to 0.024. Secondary ion mass spectrometry results show no Be diffusion, but hydrogen incorporation alongside N. The free carrier concentration is decreased by one order of magnitude mainly due to H passivation, but after RTA at 700 °C, it is increased to half that of GaInAs due to the reduced H concentration. The product of carrier concentration and Hall mobility is increased from one-tenth to about half that of the GaInAs sample.

Red shift in the photoluminescence of indium gallium arsenide nitride induced by annealing in nitrogen trifluoride

“…The annealing affects the PL in two ways. One is a strong enhancement of the radiative efficiency, which is commonly observed in annealing studies [5][6][7][8][9][10][11][12][13][14][15][16]. The other is a red shift of the InGaAsN peak position from 923 nm at 370 1C to 948 nm at 530 1C.…”

“…In addition, the heat treatment commonly causes a blue shift in wavelength. This blue shift has been attributed to the interdiffusion of gallium and indium at the InGaAsN/GaAs interface [9][10][11][12], to the redistribution of nitrogen on the group V sub-lattice [5,[12][13][14], or to nitrogen out-diffusion [12]. On the other hand, a red shift in the PL emission wavelength after annealing has been observed in only a few cases.…”

Effects of Mg doping on the electrical and luminescence characterizations of p-type GaAsN alloys grown by MBE

“…GaAsN alloy-based dilute nitrides, including InGaAsN, GaSbAsN and GaAsPN, have received much attention for novel optoelectronic devices such as long-wavelength laser diodes on GaAs [1,2], tandem solar cells with high conversion efficiency [3,4], heterojunction bipolar transistors (HBTs) with low turn-on voltage [5,6] and monolithic optoelectronic integrated circuits on Si [7,8]. In order to fabricate these optoelectronic devices, impurity doping, especially p-type, is an important issue.…”

Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study

“…Moreover, growth processes utilized for fabrication of dilute nitrides, such as gas-source molecular beam epitaxy (GS-MBE) or metalorganic chemical-vapor deposition (MOCVD), usually involve hydrogen. 21,22 Since H is a common contaminant in dilute nitrides and may affect defect formation, 23 a better understanding and control of the grown-in defects and of their interaction with hydrogen in dilute nitrides is highly desirable. Most recently, we have addressed 24 this issue by investigating the effects that low energy sub-threshold H-treatment has on defect properties of GaNP alloys with a relatively low N content of 0.6%-0.8%.…”