Annealing Behavior of Deep Trap Level in p-GaTe

Shigetomi, S.; Ikari, Tetsuo; Nakashima, Hiroshi

doi:10.1143/jjap.37.3282

Cited by 14 publications

(30 citation statements)

References 7 publications

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“…Therefore, it is reasonable to believe that the defect associated with peak C is the same type defect reported in Ref. 4. The defects associated with peaks A and B had never been reported.…”

supporting

confidence: 56%

“…[1][2][3][4][5][6][7][8][9][10][11][12] The band-gap energy of GaTe at room temperature is around 1.7 eV. This value is ideal for room-temperature x-ray and gamma-ray radiation detector applications.…”

Section: Introductionmentioning

confidence: 99%

“…Free-exciton, boundexciton, and edge emissions of undoped GaTe crystal have been well investigated, [7][8][9][10][11][12] and a shallow acceptor level around 0.15 eV has been reported and identified to be gallium vacancy V Ga . Undoped GaTe Schottky diodes were fabricated and tested, [3][4][5][6] and one DLTS measurement conducted at room temperature and above was reported. 4 GaTe crystal has a monoclinic structure with space group C2 / m, 7 while the well-studied GaSe crystal has a hexagonal structure with space group P62m; it is interesting to study the defects of GaTe in comparison with those of GaSe.…”

Section: Introductionmentioning

confidence: 99%

“…Undoped GaTe Schottky diodes were fabricated and tested, [3][4][5][6] and one DLTS measurement conducted at room temperature and above was reported. 4 GaTe crystal has a monoclinic structure with space group C2 / m, 7 while the well-studied GaSe crystal has a hexagonal structure with space group P62m; it is interesting to study the defects of GaTe in comparison with those of GaSe.…”

Section: Introductionmentioning

confidence: 99%

“…4, only one peak was reported, located between 340 and 360 K. The rate window was 320 s −1 , which shifts the peak to higher temperature. Therefore, it is reasonable to believe that the defect associated with peak C is the same type defect reported in Ref.…”

mentioning

confidence: 99%

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Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence

Cui

Caudel

Bhattacharya

et al. 2009

Journal of Applied Physics

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Deep levels of undoped GaTe and indium-doped GaTe crystals are reported for samples grown by the vertical Bridgman technique. Schottky diodes of GaTe and GaTe:In have been fabricated and characterized using current-voltage, capacitance-voltage, and deep-level transient spectroscopy ͑DLTS͒. Three deep levels at 0.40, 0.59, and 0.67 eV above the valence band were found in undoped GaTe crystals. The level at 0.40 eV is associated with the complex consisting of gallium vacancy and gallium interstitial ͑V Ga -Ga i ͒, the level at 0.59 eV is identified as the tellurium-on-gallium antisite ͑Te Ga ͒, and the last one is tentatively assigned to be the doubly ionized gallium vacancy ͑V Ga ‫ء‬ ͒. Indium isoelectronic doping is found to have noticeable impacts on reducing the Schottky saturation current and suppressing the densities of Te Ga and V Ga ‫ء‬ defects. The peak which dominated the DLTS spectrum of GaTe:In is assigned to be the defect complex consisting of V Ga and indium interstitial ͑In i ͒. Low-temperature photoluminescence ͑PL͒ spectroscopy measurements were performed on GaTe and GaTe:In crystals. A shallow acceptor level at 140 meV corresponding to V Ga was measured in undoped GaTe. Two shallow acceptor levels at 123 and 74 meV corresponding to V Ga and indium-on-gallium antisite In Ga were observed in GaTe:In samples. The PL results suggested that the indium atoms could occupy gallium vacant sites during GaTe crystal growth period and thereby change the electrical and optical properties of GaTe crystal.

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supporting

confidence: 56%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

See 3 more Smart Citations

Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence

Cui

Caudel

Bhattacharya

et al. 2009

Journal of Applied Physics

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Photoelectric and photoluminescence properties of CdTe–GaTe composite

Caraman

Spalatu

Evtodiev

et al. 2016

Physica Status Solidi (b)

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A GaTe-CdTe composite was obtained by thermal treatment at 1020 K of GaTe single crystals in Cd vapor atmosphere. The composite photoluminescence, photoconductivity, and composition are studied in this work. The photosensitivity and photoluminescence band structure are determined for both the primary crystals and the composite. The CdTe crystallites create, in the GaTe bandgap, recombination and trapping levels, which determine the structure of the photoluminescence spectra and the spectral range of composite photosensitivity. The photoluminescence spectrum of the composite at 80 K contains characteristic bands of both composite components, GaTe and CdTe. From the analysis of thermally stimulated luminescence curves, the energies of the electron trapping levels in the composite are determined.

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Hybrid functional calculations of electro-optical properties of novel Ga1−xInxTe ternary chalcogenides

Abdallah

Ouerghui

2020

Appl. Phys. A

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Annealing Behavior of Deep Trap Level in p-GaTe

Cited by 14 publications

References 7 publications

Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence

Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence

Photoelectric and photoluminescence properties of CdTe–GaTe composite

Hybrid functional calculations of electro-optical properties of novel Ga1−xInxTe ternary chalcogenides

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