Annealing and light effect on optical and electrical properties of evaporated indium selenide thin films

Structural, optical and electrical properties of CdO/Cd(OH)2 thin films grown by the SILAR method

“…All of these results can be seen in Fig. 2 and they are in accordance with the literature [11][12][13].…”

Hydrogen implantation effects on the electrical and optical properties of InSe thin films

“…Particularly, Chaudhari et al [16] reported a thickness dependent energy gap of 0.81-2.18 eV. Ateş et al [17][18][19] reported an annealing dependence of energy gap being in the range of 1.33-2.08 eV. Consistently attenuation of the conductivity activation energy via annealing and substrate temperature was also observed [19][20].…”

Photoelectrochemical properties of In2Se3 thin films: Effect of substrate temperature

“…This is because of its high absorption coefficient and optimum energy band gap which are suitable for solar to electrical/chemical energy conversion. In 2 Se 3 exhibits at least three different crystalline modifications denoted as α, β and γ with transition temperatures of 200 and 650°C, respectively for α → β and β → γ transition [16][17]. Indium chalcogenide thin films can be prepared by using various deposition techniques like chemical bath deposition [18][19], sputtering [20][21][22], solvothermal method [23], MOCVD [24] electrochemical technique [25], electrodeposition [26,27] and spray pyrolysis technique [28][29] etc.…”