Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy

X-Ray High-Resolution Diffraction and Transmission Topography Study of InGaAs Grown by Liquid Encapsulated Czochralski Technique

“…Most of the techniques to obtain ternary crystals are focused on layer growing on the relevant substrates. Techniques like metalorganic chemical vapor deposition (MOCVD) [1,2], metalorganic vapor phase epitaxy (MOVPE) [3,4] and molecular beam epitaxy (MBE) [5,6] are often used. Growth of quantum wells and quantum wires is also focused on ternary crystals.…”