2019
DOI: 10.1007/s10854-019-00943-8
|View full text |Cite
|
Sign up to set email alerts
|

Anisotropy thermoelectric and mechanical property of polycrystalline SnSe prepared under different processes

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

0
10
0

Year Published

2020
2020
2022
2022

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 11 publications
(10 citation statements)
references
References 35 publications
0
10
0
Order By: Relevance
“…Among the state‐of‐the‐art thermoelectric materials, tin selenide (SnSe) is one of the most promising candidates to apply to thermoelectric devices due to its environmentally friendly feature, high cost‐effectiveness, and outstanding thermoelectric performance derived from its appropriate bandgap of ≈0.9 eV and intrinsic low κ l 9,10 . Figure a shows the development timeline for all SnSe‐based bulk thermoelectric materials,11–124 from which a record high ZT of ≈2.8 at 773 K was found in the n‐type SnSe single crystal,11 derived from its ultralow κ l of ≈0.18 W m −1 K −1 and high S 2 σ of ≈9.0 µW cm −1 K −2 at this temperature 125. Such a high ZT is also very competitive to other state‐of‐the‐art thermoelectric systems which possess ZTs > 2, such as PbTe,126–134 GeTe,135–147 Cu 2 Se/Cu 2 S,148–157 and AgSbTe 2 158.…”
Section: Introductionmentioning
confidence: 97%
See 1 more Smart Citation
“…Among the state‐of‐the‐art thermoelectric materials, tin selenide (SnSe) is one of the most promising candidates to apply to thermoelectric devices due to its environmentally friendly feature, high cost‐effectiveness, and outstanding thermoelectric performance derived from its appropriate bandgap of ≈0.9 eV and intrinsic low κ l 9,10 . Figure a shows the development timeline for all SnSe‐based bulk thermoelectric materials,11–124 from which a record high ZT of ≈2.8 at 773 K was found in the n‐type SnSe single crystal,11 derived from its ultralow κ l of ≈0.18 W m −1 K −1 and high S 2 σ of ≈9.0 µW cm −1 K −2 at this temperature 125. Such a high ZT is also very competitive to other state‐of‐the‐art thermoelectric systems which possess ZTs > 2, such as PbTe,126–134 GeTe,135–147 Cu 2 Se/Cu 2 S,148–157 and AgSbTe 2 158.…”
Section: Introductionmentioning
confidence: 97%
“…A summary of ZTs for SnSe‐based thermoelectric materials. a) The timeline for state‐of‐the‐art SnSe bulks thermoelectric materials,11–124,169–182 the performance achieved by solution route are circled by yellow. b) Temperature‐dependent ZT and c) corresponding peak and average ZT values for polycrystalline SnSe through different fabrication techniques 13,16,22,46,58,62,95,99,101.…”
Section: Introductionmentioning
confidence: 99%
“…Fig. 4 Comparison of fracture toughness values measured experimentally for both polycrystalline and single crystalline samples 6,[22][23][24][25]31,[47][48][49][50][51][52][53][54][55][56][57][58][59][60][61] to those calculated using fracture energies estimated from the integral stress-displacement method. All markers that lie above the black diagonal line have higher experimental fracture toughness values than calculated fracture toughness values.…”
Section: Discussionmentioning
confidence: 99%
“…Particularly for highly anisotropic materials, grain orientation can be expected to play a significant role. 51 Additionally, it is important to note that many of the materials studied in this work were thermoelectric materials with very limited experimental data regarding fracture toughness. It must also be recognized that experimentally determining fracture toughness often has significant errors, particularly when calculated using the very common Vickers indentation method.…”
Section: Discussionmentioning
confidence: 99%
“…However, single crystal SnSe has the lamellar structure which makes mechanical failure, like cracks, easy to occur and cannot be widely used in thermoelectric conversion devices. [ 14 ] In addition, single crystal SnSe needs more energy consumption and time in the synthetic process, which increases its cost. On those accounts, polycrystalline SnSe‐based materials are greatly desired.…”
Section: Introductionmentioning
confidence: 99%