Anisotropy of the temperature dependence of electrical resistivity in aluminium single crystals

Abstract

The anisotropy of the temperahlredependent p a ~I of the electrical resistivity has been measured in the range 4.240 K on aluminium single crystals with a wmmon surface orientation (1lO)andspecimenaxes (100). (1ll)and (110). Thespecimens werecutfromonesingle-crystal rod with a residual resistance ratio of about 50 000. The temperaturedependent pan of the (100) specimen, p&(T), is larger ulao that of the (111) specimen. &,(T), below about 25 K. Then, &(T) becomes smaller than p $ , ( ~) above that t e m p e w e . ~t higher temperanues, the anisotropy gsadually disappears. On the other hand, the temperamre-dependent pan of the (110) specimen, p%(T), is smaller than &(T) at low temperatures and ulis anismpy vanishes rapidly at higher temperawes. A mechanism for the anisotropy that arises from the anisotropic distribution of conduction electmns m an elecbic field applied along (100) is suggested.

Anisotropy of the size effect in the electrical resistivity of high-purity Al single crystals

“…Therefore, as is obvious from the figure, the size effect increases in the following order of the surface orientations: {110}, {111}, {100}. The anisotropic dependence of the bulk resistivity ρ b on the current direction in high-purity Al has been reported elsewhere [4][5][6][7]. The solid curves in the figure are drawn according to the Fuchs-Sondheimer theory [8], assuming that the specularity parameter p = 0, and that the product of the bulk resistivity and bulk mean free path ρ b b = 0.82 f m 2 [9,10].…”

“…Therefore, we would expect the anisotropic dependence of ρ 4.2 K on the axis orientation to be a reflection of the anisotropy of the bulk resistivity ρ b in high-purity Al; i.e. ρ b increases in the following order of the directions: 110 , 111 , 100 [4][5][6][7]. The anisotropy of ρ b is noteworthy in relation to electronic transport phenomena, since it has been widely believed that ρ b is isotropic in a normal metal with cubic symmetry such as Al [16].…”

Ballistic Electron Transport Characteristics in High-Purity Aluminum Single Crystals

“…Here, l b is the bulk mean free path of conduction electrons. Using these parameters, the Fuchs-Sondheimer theory has been shown to give a good estimation of r b for a singlecrystal specimen of pure aluminum with the f110g surface [5,6]. The value of l b at 4.2 K for the material is estimated to be 3.3 mm from the values of r b l b and r b .…”