Anisotropy of the Runaway Electron Generation Process in Strongly Inhomogeneous Electric Fields

Mamontov, Yu. I.; Зубарев, Н. М.; Uimanov, I. V.

doi:10.1109/tps.2021.3082693

Cited by 4 publications

(1 citation statement)

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“…The calculated dependence U c (R) is in rather good agreement with the results of numerical simulations of the electron runaway probability in a gas diode on the basis of the 2D Monte-Carlo technique and of 1D Boltzmann's equation [46,47]. This proves the effectiveness of relatively simple and easy-to-analyze deterministic models of type (5), which, as it turns out, have comparable predictive power with much more complex probabilistic Monte-Carlo and kinetic models.…”

Section: Results Of Numerical Simulations: Two Regimes Of Electron Ru...supporting

confidence: 79%

Features of Electron Runaway in a Gas Diode with a Blade Cathode

2022

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Conditions for electron runaway in a gas diode with a blade cathode providing a strongly inhomogeneous distribution of the electric field in the interelectrode gap have been studied theoretically. It has been demonstrated that the character of electron runaway differs qualitatively for cathodes with a different rounding radius of the edges. In the case of a relatively large edge radius (tens of microns or more), the conditions for the transition of electrons to the runaway mode are local in nature: they are determined by the field distribution in the immediate vicinity of the cathode where the electrons originate from. Here, the relative contribution of the braking force acting on electrons in a dense gas reaches a maximum. This behavior is generally similar to the behavior of electrons in a uniform field. For a cathode with a highly sharpened edge, the relative contribution of the braking force is maximum in the near-anode region. As a consequence, the runaway condition acquires a nonlocal character: it is determined by the electron dynamics in the entire interelectrode gap.

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Section: Results Of Numerical Simulations: Two Regimes Of Electron Ru...supporting

confidence: 79%