Anisotropy of optical properties of SrLaAlO4 and SrLaAlO4:Nd

Ryba‐Romanowski, W.; Gołąb, Stanisław; Sokólska, I.; Pisarski, Wojciech A.; Dominiak‐Dzik, G.; Pajączkowska, A.; Berkowski, M.

doi:10.1016/0925-8388(94)01347-0

Cited by 46 publications

(29 citation statements)

References 6 publications

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“…The fundamental UV optical absorption edge of SrLaΑΙO 4 crystal was located experimentally in the region 220-240 nm [1], and very similar results were found for the SrLaGaO 4 crystal. .…”

Section: Introductionsupporting

confidence: 63%

Investigation of As Grown and Induced Structural Defects in SrLaXO₄(x = Al Ga) Crystals

et al. 1997

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“…The fundamental UV optical absorption edge of SrLaΑΙO 4 crystal was located experimentally in the region 220-240 nm [1], and very similar results were found for the SrLaGaO 4 crystal. .…”

Section: Introductionsupporting

confidence: 63%

Investigation of As Grown and Induced Structural Defects in SrLaXO₄(x = Al Ga) Crystals

et al. 1997

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“…Here, we seek to understand the effects of l and x on the electronic band gap in LaSrAlO 4 and predict its change on ordering. Experiments of the solid solution phase (Z ¼ 0) report an indirect band gap (E g ) near B4-5 eV (refs [26][27][28], whereas the proposed A-site ordered structures examined herein remain to be synthesized and are unknown.…”

mentioning

confidence: 99%

Massive band gap variation in layered oxides through cation ordering

Balachandran

Rondinelli

2015

Nat Commun

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The electronic band gap is a fundamental material parameter requiring control for light harvesting, conversion and transport technologies, including photovoltaics, lasers and sensors. Although traditional methods to tune band gaps rely on chemical alloying, quantum size effects, lattice mismatch or superlattice formation, the spectral variation is often limited to o1 eV, unless marked changes to composition or structure occur. Here we report large band gap changes of up to 200% or B2 eV without modifying chemical composition or use of epitaxial strain in the LaSrAlO 4 Ruddlesden-Popper oxide. First-principles calculations show that ordering electrically charged [LaO] 1 þ and neutral [SrO] 0 monoxide planes imposes internal electric fields in the layered oxides. These fields drive local atomic displacements and bond distortions that control the energy levels at the valence and conduction band edges, providing a path towards electronic structure engineering in complex oxides.

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“…The latter effect should be small when a high laser efficiency is needed. It appears that this condition is fulfilled in the case of a laser diode pumped SrLaGa3O7:Nd laser, which showed an optical slope efficiency of about 50% [1]. Considerably lower efficiencies were recorded during investigation of SrLaAlO4:Nd laser crystal [2].…”

Section: Introductionmentioning

confidence: 96%

“…It appears that this condition is fulfilled in the case of a laser diode pumped SrLaGa3O7:Nd laser, which showed an optical slope efficiency of about 50% [1]. Considerably lower efficiencies were recorded during investigation of SrLaAlO4:Nd laser crystal [2]. Poor laser performance of this material has been attributed to reduced extraction efficiency due to very large emission band width.…”

Section: Introductionmentioning

confidence: 96%

Optical Study of SrLaGaO₄and SrLaGa₃O₇Doped with Nd³⁺and Yb³⁺

et al. 1996

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Single crystals of SrLaeaO 4 and SrLaGa3O7 singly doped with Nd and codoped with Nd and Yb have been grown by the Czochralski method.Both the compounds form tetragonal crystals but belong to different space groups. A common feature of these matrices is a structural disorder resulting from statistical distribution of Sr"' and Lai+ ions over the lattice sites. A previous investigation of a laser diode pumped SrLaGa3O7:Nd laser revealed that inhomogeneous broadening of spectral lues of Nd 3 + was advantageous for optical pumping and did not influence adversely the extraction efficiency. The present paper deals mainly with optical properties of Yb 3+ ions which are of interest for the design of lasers pumped by a diode laser and operating near 1 /m.

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Anisotropy of optical properties of SrLaAlO4 and SrLaAlO4:Nd

Cited by 46 publications

References 6 publications

Investigation of As Grown and Induced Structural Defects in SrLaXO₄(x = Al Ga) Crystals

Investigation of As Grown and Induced Structural Defects in SrLaXO₄(x = Al Ga) Crystals

Massive band gap variation in layered oxides through cation ordering

Optical Study of SrLaGaO₄and SrLaGa₃O₇Doped with Nd³⁺and Yb³⁺

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Anisotropy of optical properties of SrLaAlO4 and SrLaAlO4:Nd

Cited by 46 publications

References 6 publications

Investigation of As Grown and Induced Structural Defects in SrLaXO4(x = Al Ga) Crystals

Investigation of As Grown and Induced Structural Defects in SrLaXO4(x = Al Ga) Crystals

Massive band gap variation in layered oxides through cation ordering

Optical Study of SrLaGaO4and SrLaGa3O7Doped with Nd3+and Yb3+

Contact Info

Product

Resources

About

Investigation of As Grown and Induced Structural Defects in SrLaXO₄(x = Al Ga) Crystals

Investigation of As Grown and Induced Structural Defects in SrLaXO₄(x = Al Ga) Crystals

Optical Study of SrLaGaO₄and SrLaGa₃O₇Doped with Nd³⁺and Yb³⁺