Anisotropy of Magnetoresistance in HoB₁₂

Abstract

We present results of precision measurements of magnetoresistance of isotopically pure Ho 11 B12 at low temperatures 2 ÷ 10 K in magnetic field up to 80 kOe of different orientation to the crystal axes. The data obtained revealed strong anisotropy of magnetoresistance and allowed us to reconstruct magnetic H−T phase diagrams for main crystallographic directions H [001], [110], and [111]. Analysis of magnetoresistance derivatives allowed to conclude in favor of two main magnetoresistance contributions. Among of them the negative quadratic component is attributed to charge carriers scattering on a magnetic clusters of Ho 3+ ions (4f component) and positive linear one may be explained in terms of scattering on a spin density waves (5d component).