Anisotropy of in-plane hole<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>g</mml:mi></mml:math>factor in CdTe/ZnTe quantum dots

Bogucki, A.; Smoleński, T.; Goryca, M.; Kazimierczuk, T.; Kobak, J.; Pacuski, W.; Wojnar, P.; Kossacki, P.

doi:10.1103/physrevb.93.235410

Cited by 7 publications

(5 citation statements)

References 44 publications

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“…Due to a complex confinement potential profile and coupling of the spin degree of freedom of an electron to its orbital motion, the g-factor of electrons in a low-dimensional InSb quantum structure is expected to be strongly anisotropic. There have been studies showing that the g-factors in nanostructures, such as metal copper nanoparticles [8,9], semiconductor InAs QDs [10][11][12][13][14][15][16][17], Si QDs [18][19][20], InP nanowire QDs [21], Ge-Si core/shell nanowire QDs [22], InAs/InAlGaAs self-assembled QDs [23], CdTe/ZnTe QDs [24], and p-type GaAs/AlGaAs QDs [25], are anisotropic and/or level-dependent. Especially, with regards to semiconductor nanowire quantum structures, large orbital contributions to the electron g-factor have recently been theoretically identified [26] and experimentally demonstrated [17].…”

Section: Introductionmentioning

confidence: 99%

Measurements of anisotropic g-factors for electrons in InSb nanowire quantum dots

Huang

Wang

et al. 2020

Nanotechnology

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We have measured the Zeeman splitting of quantum levels in few-electron quantum dots (QDs) formed in narrow bandgap InSb nanowires via the Schottky barriers at the contacts under application of different spatially orientated magnetic fields. The effective g-factor tensor extracted from the measurements is strongly anisotropic and level-dependent, which can be attributed to the presence of strong spin–orbit interaction (SOI) and asymmetric quantum confinement potentials in the QDs. We have demonstrated a successful determination of the principal values and the principal axis orientations of the g-factor tensors in an InSb nanowire QD by the measurements under rotations of a magnetic field in the three orthogonal planes. We also examine the magnetic field evolution of the excitation spectra in an InSb nanowire QD and extract a SOI strength of Δ s o ∼ 180 μeV from an avoided level crossing between a ground state and its neighboring first excited state in the QD.

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Section: Introductionmentioning

confidence: 99%

Measurements of anisotropic g-factors for electrons in InSb nanowire quantum dots

Huang

Wang

et al. 2020

Nanotechnology

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“…In the experiment, for each studied dot we collected the PL spectra as a function of linear polarization angle of detection. Such a measurement provides information not only about the value of the fine-structure splitting (δ 1 ) but also about the in-plane anisotropy axis of each QD [30]. In contrast to III-V QDs [32], we do not observe any notable correlation between the in-plane anisotropy parameters (splitting and direction) and the crystallographic axes, the transition energy and the biexciton relative energy, which is consistent with the previous reports on II-VI QDs [26,31].…”

Section: Anisotropic Exchange Splitting Of X and Xxmentioning

confidence: 99%

Comparison of magneto-optical properties of various excitonic complexes in CdTe and CdSe self-assembled quantum dots

Kobak

Smoleński

Goryca

et al. 2016

J. Phys.: Condens. Matter

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We present a comparative study of two self-assembled quantum dot (QD) systems based on II-VI compounds: CdTe/ZnTe and CdSe/ZnSe. Using magneto-optical techniques we investigated a large population of individual QDs. The systematic photoluminescence studies of emission lines related to the recombination of neutral exciton X, biexciton XX, and singly charged excitons (X + , X − ) allowed us to determine average parameters describing CdTe QDs (CdSe QDs): X-XX transition energy difference 12 meV (24 meV); fine-structure splitting δ1 = 0.14 meV (δ1 = 0.47 meV); g-factor g = 2.12 (g = 1.71); diamagnetic shift γ = 2.5 µeV/T 2 (γ = 1.3 µeV/T 2 ). We find also statistically significant correlations between various parameters describing internal structure of excitonic complexes.

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“…There are various methods to study the hole spin in low-dimensional semiconductor systems. Some of them, such as polarized photoluminescence [4][5][6] and spin-flip Raman scattering [7][8][9], require the application of quite strong transverse magnetic fields in order to resolve the small Zeeman splittings, by which also band mixing effects are changed, for example. Additionally, tilting of the field axis away from the Voigt geometry is often used to involve the larger out-of-plane hole g factor component in the Zeeman interaction [10].…”

Section: Introductionmentioning

confidence: 99%

The in-plane anisotropy of the hole $g$ factor in CdTe/(Cd,Mg)Te quantum wells studied by spin-dependent photon echoes

Poltavtsev,

Yugova,

Kosarev

et al. 2020

Preprint

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We use the two-pulse spin-dependent photon echo technique to study the in-plane hole spin anisotropy in a 20 nm-thick CdTe/Cd0.76Mg0.24Te single quantum well by exciting the donor-bound exciton resonance. We take advantage of the photon echo sensitivity to the relative phase of the electron and hole spin precession and study various interactions contributing to the hole in-plane spin properties. The main contribution is found to arise from the crystal cubic symmetry described by the Luttinger parameter q = 0.095, which is substantially larger than the one theoretically expected for CdTe or found in other quantum well structures. Another contribution is induced by the strain within the quantum well. These two contributions manifest as different harmonics of the spin precession frequencies in the photon echo experiment, when strength and orientation of the Voigt magnetic field are varied. The magnitude of the effective in-plane hole g factor is found to vary in the range | gh |=0.125-0.160 in the well plane.

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Anisotropy of in-plane holegfactor in CdTe/ZnTe quantum dots

Cited by 7 publications

References 44 publications

Measurements of anisotropic g-factors for electrons in InSb nanowire quantum dots

Measurements of anisotropic g-factors for electrons in InSb nanowire quantum dots

Comparison of magneto-optical properties of various excitonic complexes in CdTe and CdSe self-assembled quantum dots

The in-plane anisotropy of the hole $g$ factor in CdTe/(Cd,Mg)Te quantum wells studied by spin-dependent photon echoes

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